<3s.mi-donau.ctoi L/^ioaucii, One,
LS
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD239/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD240/A/B/C respectively
!
Jff
" - A
dE ^
l
W^^''
TO-220
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Symbol
VCEO
Parameter
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
Emitter-Base Voltage
Collector Current (DC)
'Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
1 Base 2. collector s.Emitter
Value
45
60
80
100
55
70
90
115
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
VCER
VEBO
'c
ICP
IB
PC
Tj
T
STG
5
2
4
0.6
30
150
-65-150
Electrical Characteristics T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
'Collector-Emitter Sustaining Voltage
: BD239
: BD239A
: BD239B
: BD239C
Collector Cut-off Current
: BD239/A
: BD239B/C
Collector Cut-off Current
: BD239
: BD239A
: BD239B
: BD239C
Emitter Cut-off Current
*DC Current Gain
•Collector-Emitter Saturation Voltage
•Base-Emitter ON Voltage
Test Condition
l
c
= 30mA, I
B
= 0
Win. Typ.
45
60
80
100
Max.
Units
V
V
V
V
'ceo
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 1 00V, V
BE
= 0
V
EB
= 5V, l
c
= 0
V
CE
= 4V, l
c
= 0.2A
V
CE
= 4V, I
C
=1A
l
c
= 1A, I
B
= 0.2A
V
CE
= 4V, l
c
= 1A
0.3
0.3
0.2
0.2
0.2
0.2
1
40
15
0.7
1.3
mA
mA
mA
mA
mA
mA
mA
'CES
'EBO
hFE
V
CE
(sat)
V
BE
(on)
V
V
• Pulse Test: PW=350ns, duty Cycle<2-0% Pulsed
Quality Semi-Conductors
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