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Datasheet> All Categories > Discrete semiconductor> The transistor> BC558C
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BC558C

Description
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size274KB，3 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Environmental Compliance
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BC558C Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

BC558C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerKEC
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
B
BC556/7/8
EPITAXIAL PLANAR PNP TRANSISTOR
C
For Complementary With NPN Type BC546/547/548.
N
K
D
E
G
A
FEATURES
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
RATING
-80
V
CBO
-50
-30
-65
V
CEO
-45
-30
-5
V
EBO
-5
-5
-100
I
C
-100
-100
100
I
E
100
100
P
C
T
j
T
stg
625
150
-55 150
mW
mA
mA
V
V
V
L
1
2
3
UNIT
H
F
F
BC556
Collector-Base
Voltage
BC557
BC558
BC556
Collector-Emitter
Voltage
BC557
BC558
BC556
Emitter-Base
Voltage
BC557
BC558
BC556
Collector Current
BC557
BC558
BC556
Emitter Current
BC557
BC558
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
1998. 10. 8
Revision No : 3
1/3

BC558C Related Products

BC558C BC558A BC558B BC556A BC557A BC556B BC557B BC557C
Description Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknow unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 30 V 30 V 65 V 45 V 65 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 420 110 200 110 110 200 200 420
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W 0.625 W 0.625 W 0.625 W 0.625 W 0.625 W
surface mount NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
Maker KEC - KEC KEC KEC KEC KEC KEC
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified

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