Glass passivated thyristors in a plastic TO220 package.
They are intended for use in applications requiring high
bidirectional blocking voltage capability and high thermal
cycling performance.
Typical applications include motor control, industrial and
domestic lighting, heating and static switching
.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
BT152-400R BT152-600R BT152-800R
V
DRM
V
RRM
I
T(RMS)
I
T(AV)
I
TSM
P
GM
PG
(AV)
T
stg
T
j
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
RMS on-state current
Average on-state current
Non-repetitive peak on-
state current
Peak gate power
Average gate power
Storage temperature range
Operating junction
temperature
450
450
650
650
20
13
200
20
0.5
-40 to +150
125
800
V
800
A
A
A
W
W
°C
°C
Unit
THERMAL CHARACTERISTICS
Symbol
R
∂j-mb
R
∂JA
Ratings
Thermal resistance junction to mounting base
Thermal resistance junction to ambient
COMSET SEMICONDUCTORS
Value
≤
1.1
≤
60
Unit
°C/W
26/09/2012
1|3
SEMICONDUCTORS
BT152 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
DRM
V
RRM
I
GT
V
GT
I
L
I
H
I
D
I
R
V
T
Ratings
Repetitive peak
off-state voltage
Repetitive peak reverse
voltage
Gate trigger current
Gate trigger voltage
Latching current
Holding current
Off-state current
Reverse current
On-state voltage
Test Condition(s)
BT152-400R
BT152-600R
BT152-800R
BT152-400R
BT152-600R
BT152-800R
V
D
= 12 V; I
T
= 100 mA
V
D
= 12 V; I
T
= 100 mA
V
D
= 12 V; I
GT
= 100 mA
V
D
= 12 V; I
GT
= 100 mA
V
D
= V
DRM max;
T
j
= 125°C
V
R
= V
RRM max;
T
j
= 125°C
I
T
= 40 A
Min
450
650
800
450
650
800
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
-
-
32
1.5
80
60
1
1
1.75
Unit
V
mA
V
mA
mA
mA
mA
V
DYNAMIC CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
dV
D
/dt
t
gt
Ratings
Critical rate of rise of
off-state voltage
Gate controlled
turn-on time
Circuit commutated
Turn-off time
Test Condition(s)
V
DM
= 67% V
DRMmax
T
j
= 125°C
Exponential waveform; gate
open circuit
I
TM
= 40 A; V
D
= V
DRMmax
I
G
= 0.1 A; dI
G
/dt = 5 A/µs
V
DM
= 67% V
DRMmax
T
j
= 125°C
I
TM
= 50 A; V
R
= 25 V
R
GK
= 100
Ω
dI
TM
/dt = 30 A/µs
dV
D
/dt = 50 V/µS
Min
200
-
Typ
300
2
Max
-
-
Unit
V/µs
µs
t
q
-
70
-
µs
26/09/2012
COMSET SEMICONDUCTORS
2|3
SEMICONDUCTORS
BT152 Series
MECHANICAL DATA CASE TO-220
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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