IC 1K X 4 OTPROM, 75 ns, CDIP18, CERAMIC, DIP-18, Programmable ROM
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | National Semiconductor（TI ） |
| package instruction | DIP, DIP18,.3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum access time | 75 ns |
| JESD-30 code | R-GDIP-T18 |
| JESD-609 code | e0 |
| memory density | 4096 bit |
| Memory IC Type | OTP ROM |
| memory width | 4 |
| Number of functions | 1 |
| Number of terminals | 18 |
| word count | 1024 words |
| character code | 1000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 1KX4 |
| Output characteristics | OPEN-COLLECTOR |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP18,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum seat height | 5.08 mm |
| Maximum slew rate | 0.14 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | BIPOLAR |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 7.62 mm |
| DM54S572J | DM74S572V | DM74S572J | DM74S572N | |
|---|---|---|---|---|
| Description | IC 1K X 4 OTPROM, 75 ns, CDIP18, CERAMIC, DIP-18, Programmable ROM | IC 1K X 4 OTPROM, 60 ns, PQCC20, PLASTIC, LCC-20, Programmable ROM | IC 1K X 4 OTPROM, 60 ns, CDIP18, CERAMIC, DIP-18, Programmable ROM | IC 1K X 4 OTPROM, 60 ns, PDIP18, PLASTIC, DIP-18, Programmable ROM |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） |
| package instruction | DIP, DIP18,.3 | QCCJ, LDCC20,.4SQ | DIP, DIP18,.3 | DIP, DIP18,.3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum access time | 75 ns | 60 ns | 60 ns | 60 ns |
| JESD-30 code | R-GDIP-T18 | S-PQCC-J20 | R-GDIP-T18 | R-PDIP-T18 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| memory density | 4096 bit | 4096 bit | 4096 bit | 4096 bit |
| Memory IC Type | OTP ROM | OTP ROM | OTP ROM | OTP ROM |
| memory width | 4 | 4 | 4 | 4 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of terminals | 18 | 20 | 18 | 18 |
| word count | 1024 words | 1024 words | 1024 words | 1024 words |
| character code | 1000 | 1000 | 1000 | 1000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 70 °C | 70 °C | 70 °C |
| organize | 1KX4 | 1KX4 | 1KX4 | 1KX4 |
| Output characteristics | OPEN-COLLECTOR | OPEN-COLLECTOR | OPEN-COLLECTOR | OPEN-COLLECTOR |
| Package body material | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY |
| encapsulated code | DIP | QCCJ | DIP | DIP |
| Encapsulate equivalent code | DIP18,.3 | LDCC20,.4SQ | DIP18,.3 | DIP18,.3 |
| Package shape | RECTANGULAR | SQUARE | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | CHIP CARRIER | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum seat height | 5.08 mm | 4.57 mm | 5.08 mm | 5.08 mm |
| Maximum slew rate | 0.14 mA | 0.14 mA | 0.14 mA | 0.14 mA |
| Maximum supply voltage (Vsup) | 5.5 V | 5.25 V | 5.25 V | 5.25 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.75 V | 4.75 V | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | YES | NO | NO |
| technology | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR |
| Temperature level | MILITARY | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | J BEND | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | QUAD | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| width | 7.62 mm | 8.89 mm | 7.62 mm | 7.62 mm |
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