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FQT1N80TF

Description
N-Channel MOSFET 800V, 0.2A, 20
File Size808KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet View All

FQT1N80TF Overview

N-Channel MOSFET 800V, 0.2A, 20

FQT1N80TF_WS N-Channel MOSFET
August 2011
QFET
FQT1N80TF_WS
N-Channel MOSFET
800V, 0.2A, 20Ω
Features
• R
DS(on)
= 15.5Ω (Typ.)@ V
GS
= 10V, I
D
= 0.1A
• Low gate charge ( Typ. 5.5nC)
• Low C
rss
( Typ. 2.7pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
D
S
G
G
SOT-223
FQT Series
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
=
25
o
C)
25
o
C
- Derate above
-Continuous (T
C
=
-Continuous (T
C
=
- Pulsed
25
o
C)
100
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
FQT1N80TF_WS
800
±30
0.2
0.12
0.8
90
0.2
0.2
4.0
2.1
0.02
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
Thermal Characteristics
Symbol
R
θJA
Parameter
Thermal Resistance, Junction to Ambient*
Min.
-
Max.
60
Units
o
C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2011 Fairchild Semiconductor Corporation
FQT1N80TF_WS Rev. C0
1
www.fairchildsemi.com
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