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KSP45TA_12

Description
NPN Epitaxial Silicon Transistor
File Size248KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KSP45TA_12 Overview

NPN Epitaxial Silicon Transistor

KSP44/45 — NPN Epitaxial Silicon Transistor
October 2012
KSP44/45
NPN Epitaxial Silicon Transistor
Features
• High-Voltage Transistor
• Collector-Emitter Voltage: V
CEO
= KSP44: 400V
KSP45: 350V
Collector Power Dissipation: P
C
(max) = 625mW
1
TO-92
1. Emitter 2. Base 3. Collector
Ordering Information
Part Number
KSP44BU
KSP44TA
KSP44TF
KSP45TA
Top Mark
KSP44
KSP44
KSP44
KSP45
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Tape and Reel
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only.
Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Parameter
: KSP44
: KSP45
: KSP44
: KSP45
Value
500
400
400
350
6
300
150
-55 to 150
Unit
V
V
V
V
V
mA
C
C
Thermal Characteristics
Symbol
P
C
P
C
R
JC
R
JA
Parameter
Collector Power Dissipation (T
A
= 25C)
Collector Power Dissipation (T
C
= 25C)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
625
1.5
83.3
200
Unit
mW
W
C/W
C/W
© 2002 Fairchild Semiconductor Corporation
KSP44/45 Rev. A3
1
www.fairchildsemi.com

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