DGSK 20-022AS
DGSK 20-025AS
Gallium Arsenide Schottky Rectifier
Preliminary Data
I
FAV
= 2x12 A
V
RRM
= 220/250 V
C
Junction
= 18 pF
V
RSM
V
220
250
V
RRM
V
220
250
Type
TO-263 AB
A
A
DGSK 20-022AS
DGSK 20-025AS
C (TAB)
A
C
A
A = Anode, C = Cathode
Symbol
I
FAV
I
FAV
I
FSM
T
VJ
T
stg
P
tot
Conditions
T
C
= 25°C; DC
T
C
= 90°C; DC
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
Maximum Ratings
12
9
20
-55...+175
-55...+150
A
A
A
°C
°C
W
T
C
= 25°C
34
Features
Low forward voltage
Very high switching speed
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
High temperature operation capability
Epoxy meets UL 94V-0
q
q
q
q
q
q
q
Applications
MHz Switched mode power supplies
q
(SMPs)
q
q
q
Small size SMPs
High frequency converters
Resonant converters
Symbol
I
R
V
F
C
J
R
thJC
Weight
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 125°C V
R
= V
RRM
I
F
= 5 A;
I
F
= 5 A;
T
VJ
= 125°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
1.3
1.3
1.3
1.2
18
4.4
2
1.5
mA
mA
V
V
pF
K/W
g
V
R
= 100 V; T
VJ
= 125°C
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
119
IXYS reserves the right to change limits, Conditions and dimensions.
© 2001 IXYS All rights reserved
1-2
DGSK 20-022AS
DGSK 20-025AS
20
10
A
I
F
1
100
C
J
200
pF
0.1
T
VJ
=
125°C
25°C
T
VJ
= 125°C
0.01
0.0
0.5
1.0
1.5
V
F
V 2.0
10
0.1
1
10
100 V 1000
V
R
Fig. 1 typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
Single Pulse
Outline
TO-263 AB
1
Z
thJC
0.1
0.01
DGS10-015/018BS
0.00001
0.0001
0.001
0.01
0.1
1
t
s
10
Dim.
A
A1
b
b2
c
c2
D
D1
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
8.00
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.89
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.315
.190
.110
.039
.055
.029
.055
.380
.350
Fig. 3 typ. thermal impedance junction to case
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers
V
F
(I
F
)
extraction of excess carriers
causes temperature dependant
reverse recovery (t
rr
, I
RM
, Q
rr
)
delayed saturation leads to V
FR
GaAs Schottky Diode
by majority carriers only
V
F
(I
F
), see Fig. 1
reverse current charges
junction capacity C
J
, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
E
E1
e
L
L1
L2
L3
L4
R
9.65
10.29
6.22
8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
0.46
15.88
2.79
1.40
1.78
0.20
0.74
.380
.405
.245
.320
.100 BSC
.575
.090
.040
.050
0
.018
.625
.110
.055
.070
.008
.029
© 2001 IXYS All rights reserved
2-2
119