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FJP3307D_08

Description
High Voltage Fast Switching NPN Power Transistor
File Size534KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet View All

FJP3307D_08 Overview

High Voltage Fast Switching NPN Power Transistor

FJP3307D — High Voltage Fast Switching NPN Power Transistor
July 2008
FJP3307D
High Voltage Fast Switching NPN Power Transistor
Features
• Built-in Diode between Collector and Emitter
• Suitable for Electronic Ballast and Switch Mode Power Supplies
Internal Schematic Diagram
C
B
1
1.Base
TO-220
2.Collector
3.Emitter
E
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
= 25°C)
Junction Temperature
Storage Temperature
Value
700
400
9
8
16
4
80
150
-55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
* Pulse Test: PW = 300ms, Duty Cycle = 2% Pulsed
Electrical Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
T
C
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Conditions
I
C
= 500μA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500μA, I
C
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 2A
V
CE
= 5V, I
C
= 5A
I
C
= 2A, I
B
= 0.4A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 2A
Min.
700
400
9
Typ.
Max
Units
V
V
V
1
8
5
40
30
1
2
3
mA
V
V
V
© 2008 Fairchild Semiconductor Corporation
FJP3307D Rev. A
www.fairchildsemi.com
1
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