Green
DMPH6023SK3
60V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-60V
R
DS(ON)
Max
33mΩ @ V
GS
= -10V
40mΩ @ V
GS
= -4.5V
I
D
Max
T
C
= +25°C
-35A
-32A
Features
Rated to +175°C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Low On-Resistance
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCED INFORMATION
Description
This MOSFET has been designed to meet the stringent requirements
of Automotive applications.
Applications
It is qualified to AECQ101, supported by a PPAP and is ideal for use
in:
Engine Management Systems
Body Control Electronics
DCDC Converters
Mechanical Data
TO252 (DPAK)
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.33 grams (Approximate)
D
G
S
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMPH6023SK3-13
Notes:
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
P6023S
YYWW
=Manufacturer’s Marking
P6023S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
DMPH6023SK3
Document number: DS37846 Rev. 1 - 2
1 of 7
www.diodes.com
September 2015
© Diodes Incorporated
DMPH6023SK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Steady
State
T
C
= +25°C
T
C
= +100°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
I
AS
E
AS
Value
-60
±20
-35
-27
-7.3
-6.1
-60
-2.2
-35
60
Units
V
V
A
A
A
A
A
mJ
Continuous Drain Current (Note 6) V
GS
= -10V
ADVANCED INFORMATION
Pulsed Drain Current (380µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
2.0
80
3.2
41
1.6
-55 to +175
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
-60
—
—
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
-0.7
2,569
179
143
5
26.5
53.1
7.1
12.6
6
7.1
110
62
20
14
Max
—
-1
±100
-3.0
33
40
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
nS
nS
nS
nS
nS
nC
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -10A
V
GS
= -4.5V, I
D
= -8A
V
GS
= 0V, I
S
= -1A
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -30V, I
D
= -5A
V
GS
= -10V, V
DS
= -30V,
R
G
= 3Ω, I
D
= -5A
I
F
= -5A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout, see http://www.diodes.com/datasheets/ap02001.pdf
for the latest version.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMPH6023SK3
Document number: DS37846 Rev. 1 - 2
2 of 7
www.diodes.com
September 2015
© Diodes Incorporated
DMPH6023SK3
50
V
GS
= 10V
V
GS
= 4.5V
30
V
DS
= 5V
40
25
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
V
GS
= 5V
V
GS
= 4V
V
GS
= 3.5V
20
30
ADVANCED INFORMATION
15
20
V
GS
= 3V
10
T
A
= 125°C
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
10
V
GS
= 2.5V
5
T
A
= 175°C
0
0
.5
1 1.5
2 2.5 3 3.5 4 4.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
5
0
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
.05
.1
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
I
D
= 10A
.045
.04
.035
.03
.025
.02
.015
.01
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
V
GS
= 4.5V
V
GS
= 10V
.09
I
D
= 8A
.08
.07
.06
.05
.04
.03
.02
.01
0
0
4
8
12
16
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
.07
V
GS
= 10V
2.5
T
A
= 175°C
.06
.05
.04
.03
.02
R
D S(ON )
, DRAIN-SOURCE
ON-RESISTANCE (NO RMALIZED)
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
2
V
GS
= 10V
I
D
= 10A
1.5
T
A
= 25°C
1
T
A
= -55°C
.01
0
1
.5
11
16
21
26
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
6
31
0
-50 -25
0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMPH6023SK3
Document number: DS37846 Rev. 1 - 2
3 of 7
www.diodes.com
September 2015
© Diodes Incorporated
DMPH6023SK3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
.08
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
3
2.5
.06
V
GS
= 10V
I
D
= 10A
2
ADVANCED INFORMATION
.04
1.5
I
D
= 250µA
I
D
= 1mA
1
.02
0.5
0
-50 -25 0
25
50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
30
0
-50
-25
0
25
50
75
100 125
150 175
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
100000
T
A
= 175°C
T
A
= 150°C
25
I
S
, SOURCE CURRENT (A)
I
DSS
, DRAIN LEAKAGE CURRENT (nA)
10000
20
1000
T
A
= 125°C
15
T
A
= 85°C
100
T
A
= 85°C
10
T
A
= 125°C
T
A
= 150°C
T
A
= 175°C
10
T
A
= 25°C
T
A
= 25°C
5
1
T
A
= -55°C
0
0
.3
.6
.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1.5
5 10 15 20 25 30 35 40 45 50 55 60
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Drain-Source Leakage Current vs. Voltage
.1
0
10
9
10000
f = 1MHz
V
GS
GATE THRESHOLD VOLTAGE (V)
8
7
6
5
4
3
2
1
0
0
5
10 15 20 25 30 35 40 45 50
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
55
V
DS
= -30V
I
D
= -5A
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
1000
C
oss
C
rss
100
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 Typical Junction Capacitance
40
DMPH6023SK3
Document number: DS37846 Rev. 1 - 2
4 of 7
www.diodes.com
September 2015
© Diodes Incorporated
DMPH6023SK3
100
R
DS(on)
Limited
P
W
= 10µs
P
W
= 1µs
I
D
, DRAIN CURRENT (A)
P
W
= 100µs
P
W
= 1s
10
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
ADVANCED INFORMATION
1
T
J(max)
= 175°C
T
C
= 25°C
V
GS
= 10V
Single Pulse
DUT on Infinite Heatsink
.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
D = 0.9
D = 0.7
D = 0.5
D = 0.3
100
1
r(t), TRANSIENT THERMAL RESISTANCE
.1
D = 0.1
D = 0.05
D = 0.02
.01
D = 0.01
D = 0.005
R
JC
(t) = r(t) * R
JC
D = Single Pulse
.001
.000001
R
JC
= 1.6°C/W
Duty Cycle, D = t1/ t2
.0001
.001
.01
.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 14 Transient Thermal Resistance
.00001
DMPH6023SK3
Document number: DS37846 Rev. 1 - 2
5 of 7
www.diodes.com
September 2015
© Diodes Incorporated
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