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DPS128M8BJY-30B

Description
SRAM Module, 128KX8, 30ns, CMOS, CQCC48, HERMETIC SEALED, CERAMIC, J LEADED, MODULE, SLCC-48
Categorystorage    storage   
File Size811KB,10 Pages
ManufacturerB&B Electronics Manufacturing Company
Download Datasheet Parametric View All

DPS128M8BJY-30B Overview

SRAM Module, 128KX8, 30ns, CMOS, CQCC48, HERMETIC SEALED, CERAMIC, J LEADED, MODULE, SLCC-48

DPS128M8BJY-30B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerB&B Electronics Manufacturing Company
Parts packaging codeLCC
package instructionAQCCJ, LDCC48,.51X.88
Contacts48
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time30 ns
I/O typeCOMMON
JESD-30 codeR-CQCC-J48
JESD-609 codee0
memory density1048576 bit
Memory IC TypeSRAM MODULE
memory width8
Number of functions1
Number of terminals48
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeAQCCJ
Encapsulate equivalent codeLDCC48,.51X.88
Package shapeRECTANGULAR
Package formCHIP CARRIER, PIGGYBACK
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum seat height3.6068 mm
Maximum standby current0.0018 A
Minimum standby current2 V
Maximum slew rate0.16 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
1 Megabit High Speed CMOS SRAM
DPS128M8CnY/BnY, DPS128X8CA3/BA3
DESCRIPTION:
The DPS128M8CnY/BnY, DPS128X8CA3/BA3 High Speed SRAM
devices are a revolutionary new memory subsystem using Dense-Pac
Microsystems’ ceramic Stackable Leadless Chip Carriers (SLCC).
Available in straight leaded, ‘’J’’ leaded or gullwing leaded packages,
or mounted on a 50-pin PGA co-fired ceramic substrate. These devices
pack 1-Megabits of low-power CMOS static RAM in an area as small
as 0.463 in
2
, while maintaining a total height as low as 0.082 inches.
The SLCC devices contain an individual 128K x 8 SRAMs, each
packaged in a hermetically sealed SLCC, making the modules suitable
for commercial, industrial and military applications.
The DPS128M8BnY/DPS128X8BA3 has one active low Chip Enable
(CE) while the DPS128M8CnY/DPS128X8CA3 has an active low Chip
Enable (CE) and an active high Select Line (SEL).
By using SLCCs, the ‘’Stack’’ family of modules offer a higher board
density of memory than available with conventional through-hole,
surface mount or hybrid techniques.
SLCC
‘’I’’ Leaded
SLCC
FEATURES:
Organization Available: 128Kx8
Access Times: 20*, 25, 30, 35, 45ns
Fully Static Operation - No clock or refresh required
Single +5V Power Supply,
±
10% Tolerance
TTL Compatible
Common Data Inputs and Outputs
Low Data Retention Voltage: 2.0V min.
Packages Available:
48 - Pin SLCC
48 - Pin Straight Leaded SLCC
48 - Pin ‘’J’’ Leaded SLCC
48 - Pin Gullwing Leaded SLCC
50 - Pin PGA Dense-Stack
‘’J’’ Leaded
SLCC
*
Commercial only.
Dense-Stack
Gullwing
Leaded SLCC
30A097-31
REV. D
This document contains information on a product that is currently released
to production at Dense-Pac Microsystems, Inc. Dense-Pac reserves the
right to change products or specifications herein without prior notice.
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