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FDMS86200

Description
9.6 A, 150 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA
CategoryDiscrete semiconductor    The transistor   
File Size267KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDMS86200 Overview

9.6 A, 150 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA

FDMS86200 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeQFN
package instructionROHS COMPLIANT, POWER 56, 8 PIN
Contacts8
Manufacturer packaging code8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)220 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)52 A
Maximum drain current (ID)9.6 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-240AA
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)104 W
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
FDMS86200 N-Channel Power Trench
®
MOSFET
November 2012
FDMS86200
N-Channel Power Trench
®
MOSFET
150 V, 49 A, 18 mΩ
Features
Max r
DS(on)
= 18 mΩ at V
GS
= 10 V, I
D
= 9.6 A
Max r
DS(on)
= 21 mΩ at V
GS
= 6 V, I
D
= 8.8 A
Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC-DC Conversion
Top
Bottom
Pin 1
S
S
S
S
G
S
S
D
D
D
G
D
D
D
D
D
Power 56
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
T
C
= 25 °C
T
A
= 25 °C
(Note 1a)
(Note 3)
T
C
= 25 °C
T
A
= 25 °C
(Note 1a)
Parameter
Ratings
150
±20
49
9.6
100
220
104
2.5
-55 to +150
mJ
W
°C
A
Units
V
V
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.2
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86200
Device
FDMS86200
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86200 Rev.C3
1
www.fairchildsemi.com
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