D45H11 — PNP Power Amplifier
June 2012
D45H11
PNP Power Amplifier
• This device is designed for power amplifier, regulator and switching circuits where speed is important.
• Sourced from process 5Q.
1
TO-220
Mark: D45H11
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
V
CEO
I
C
T
J
, T
STG
Collector Current
Parameter
Collector-Emitter Voltage
- Continuous
Operating and Storage Junction Temperature Range
T
a
= 25°C unless otherwise noted
Value
-80
-10
-55 to +150
Units
V
A
°C
Electrical Characteristics
Symbol
Off Characteristics
V
(BR)CEO
I
CBO
I
EBO
h
FE
V
CE (sat)
V
BE (sat)
V
BE (on)
f
T
Parameter
Test Condition
Min.
-80
Max.
Units
V
Collector-Emitter Breakdown Voltage I
C
= -100mA, I
B
= 0
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CB
= -80V, I
E
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -1V, I
C
= -2A
V
CE
= -1V, I
C
= -4A
I
C
= -8A,I
B
= -0.4A
I
C
= -8A,I
B
= -0.8A
V
CE
= -2V, I
C
= -10mA
I
C
= -500mA, V
CE
= -10V
-10
-100
60
40
-1.0
-1.5
-0.54
40
-0.65
μA
μA
On Characteristics *
V
V
V
MHZ
Small Signal Characteristics
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
T
a
= 25°C unless otherwise noted
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
60
480
2.1
62.5
Units
W
mW/°C
°C/W
°C/W
* Note) Device mounted on FR-$ PCB 36mm*18mm*1.5mm: Mounting pad for the collector lead min. 6cm2.
© 2012 Fairchild Semiconductor Corporation
D45H11 Rev. A1
1
www.fairchildsemi.com
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First Production
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Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I61
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