JMnic
Product Specification
Silicon PNP Power Transistors
2SA900
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SC1568
・Low
collector saturation voltage
APPLICATIONS
・For
audio frequency power amplifier
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute Maximun Ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-20
-18
-5
-1
-2
1.2
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
CEO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-1mA;I
B
=0
I
C
=-10μA ;I
E
=0
I
E
=-10μA ;I
C
=0
I
C
=-1A ;I
B
=-50mA
I
C
=-500mA ;I
B
=-50mA
V
CB
=-10V; I
E
=0
V
CE
=-18V; I
B
=0
I
C
=-500mA ; V
CE
=-2V
I
C
=-1.5A ; V
CE
=-2V
I
E
=0 ; V
CB
=-6V;f=1MHz
I
E
=50mA ; V
CB
=-6V
90
50
40
200
MIN
-18
-20
-5
TYP.
2SA900
MAX
UNIT
V
V
V
-0.5
-1.2
-1
-10
470
V
V
μA
μA
pF
MHz
h
FE-1
Classifications
Q
90-155
R
130-210
S
180-280
T
250-360
U
330-470
2
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