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824551261

Description
Trans Voltage Suppressor Diode, 3000W, Bidirectional, 1 Element, Silicon, DO-214AB,
CategoryDiscrete semiconductor    diode   
File Size284KB,7 Pages
ManufacturerWurth Elektronik
Environmental Compliance
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824551261 Overview

Trans Voltage Suppressor Diode, 3000W, Bidirectional, 1 Element, Silicon, DO-214AB,

824551261 Parametric

Parameter NameAttribute value
Brand NameWurth Electronik
Is it Rohs certified?conform to
MakerWurth Elektronik
package instructionR-PDSO-C2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresUL APPROVED
Maximum breakdown voltage31.92 V
Minimum breakdown voltage28.88 V
Breakdown voltage nominal value30.4 V
Maximum clamping voltage42.1 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Maximum forward voltage (VF)26 V
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation6.5 W
Maximum reverse current2 µA
Reverse test voltage26 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Dimensions: [mm]
Recommended Land Pattern: [mm]
Electrical Properties:
Properties
DC Operating Voltage
(Reverse) Breakdown Voltage
Test conditions
V
DC
1 mA
I
PEAK
10/1000 µs
V
DC
T
A
= 50 °C
10/1000 µs
Bidirectional
5.0 mm x 5.0 mm (0.03 mm thick) Copper Pads to each terminal
V
BR
V
Clamp
I
Peak
I
LEAK
P
DISS
P
DISS
Value
26
30.4
42.1
71.3
2
6.5
3000
Unit
V
V
V
A
µA
W
W
Tol.
max.
±5%
max.
max.
max.
max.
max.
9,30
4,70
2,30
Clamping Voltage
(Reverse) Peak Pulse Current
Leakage Current
3,30
3,05 ±0,15
Steady State Power Dissipation
Power Dissipation
1)
Polarity
1)
Mounted on
1,14 ±0,38
7,94 ±0,19
6,86 ±0,25
Scale - 4:1
Schematic:
2,34 ±0,28
2,5 ±0,3
General Information:
It is recommeded that the temperature of the component does not exceed +150°C under worst
case conditions
Operating Temperature
-65 °C up to +150 °C
-40 °C up to +60 °C
5,9 ± 0,32
Storage Temperature (in original
packaging)
Test conditions of Electrical Properties: +20°C, 33% RH if not specified differently
Scale - 4:1
Product Marking:
Marking
DFE
Würth Elektronik eiSos GmbH & Co. KG
EMC & Inductive Solutions
Max-Eyth-Str. 1
74638 Waldenburg
Germany
Tel. +49 (0) 79 42 945 - 0
www.we-online.com
eiSos@we-online.com
SIZE
REVISION
STATUS
CREATED
CHECKED
GENERAL TOLERANCE
PROJECTION
METHOD
KaS
DESCRIPTION
RoD
DIN ISO 2768-1m
WE-TVSP Power TVS Diode
ORDER CODE
824551261
DATE
BUSINESS UNIT
PAGE
DO-214AB
001.000
Draft
2015-11-10
eiSos
1/7
This electronic component has been designed and developed for usage in general electronic equipment only. This product is not authorized for use in equipment where a higher safety standard and reliability standard is especially required or where a failure of the product is reasonably expected to cause severe personal injury or death, unless the parties have executed an agreement specifically governing such use. Moreover Würth Elektronik eiSos GmbH
& Co KG products are neither designed nor intended for use in areas such as military, aerospace, aviation, nuclear control, submarine, transportation (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network etc.. Würth Elektronik eiSos GmbH & Co KG must be informed about the intent of such usage before the design-in stage. In addition, sufficient reliability evaluation checks for safety
must be performed on every electronic component which is used in electrical circuits that require high safety and reliability functions or performance.
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