Phototransistors
PNZ0147
Silicon NPN Phototransistor
Unit : mm
For optical control systems
0.5±0.1
Features
High sensitivity
Wide spectral sensitivity, matched to GaAs LEDs
Fast response : t
r
, t
f
= 3
µs
(typ.)
1.05±0.1
Type number : Emitter mark (Green)
10.0 min.
10.0 min.
3.2±0.3 3.2±0.3
ø1.8
2
1
45
˚
2.2±0.15
(0.7)
0.15
(0.7)
1.8
2.8±0.2 1.8
Small size designed for easier mounting to printed circuit board
2.8±0.2
R0.9
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
20
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
0.85
±
0.15
1: Collector
2: Emitter
Electro-Optical Characteristics
(Ta = 25˚C)
Parameter
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
*1
Symbol
I
CEO
I
CE(L)1*3
I
CE(L)2
λ
P
θ
t
r
, t
f*2
V
CE(sat)
V
CE
= 10V
Conditions
V
CE
= 10V, L = 2 lx
*1
V
CE
= 10V, L = 500 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100Ω
I
CE(L)
= 1mA, L = 1000 lx
*1
min
3
typ
0.01
12
3.5
800
24
3
0.2
max
0.5
Unit
µA
µA
mA
nm
deg.
10
0.5
µs
V
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Sig.IN
V
CC
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
,,
,,
,,
50Ω
R
L
*3
I
CE(L)
Classifications
Class
I
CE(L)
(µA)
Q
3.0 to 11.0
R
7.0 to 24.0
S
>16.0
0.4±0.1
1
Phototransistors
PNZ0147
P
C
— Ta
60
20
I
CE(L)
— V
CE
Ta = 25˚C
T = 2856K
10
5
I
CE(L)
— L
I
CE(L)
(µA)
V
CE
= 10V
Ta = 25˚C
T = 2856K
P
C
(mW)
50
I
CE(L)
(mA)
16
L =1500 lx
10
4
Collector power dissipation
40
Collector photo current
1000 lx
Collector photo current
12
30
10
3
8
500 lx
4
20
10
2
10
250 lx
100 lx
0
– 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
10
1
10
10
2
10
3
Ambient temperature
Ta (˚C )
Collector to emitter voltage
V
CE
(V)
Illuminance L (lx)
I
CEO
— Ta
1
V
CE
= 10V
10
2
I
CE(L)
— Ta
V
CE
= 10V
T = 2856K
100
Spectral sensitivity characteristics
V
CE
= 10V
Ta = 25˚C
I
CE(L)
(mA)
I
CEO
(µA)
10
–1
10
S (%)
Relative sensitivity
0
40
80
120
80
Dark current
10
–2
Collector photo current
60
40
1
10
–3
20
10
–4
– 20
0
20
40
60
80
100
10
–1
– 40
0
200
400
600
800
1000
1200
Ambient temperature
Ta (˚C )
Ambient temperature
Ta (˚C )
Wavelength
λ
(nm)
Directivity characteristics
0˚
100
10˚
20˚
10
2
t
r
, t
f
— I
CE(L)
V
CC
= 10V
Ta = 25˚C
R
L
= 1kΩ
500Ω
100Ω
1
Relative sensitivity S (%)
90
80
70
60
50
40
30
20
30˚
Rise time, Fall time t
r
, t
f
(µs)
10
40˚
50˚
60˚
70˚
80˚
90˚
10
–1
10
–2
10
–1
1
10
10
2
Collector photo current
I
CE(L)
(mA)
2
Embedded System
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