This product complies with the RoHS Directive (EU 2002/95/EC).
DMG26402
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
Features
Package
Code
Mini6-G4-B
Name
Pin
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Basic Part Number
DRC2124E + DRA2124E (Individual)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: F9
Internal Connection
Unit
V
V
mA
V
V
mA
mW
°C
°C
Resistance
value
Tr1
Tr2
1
(E1)
(C1)
6
Tr1
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Tr1
Collector-emitter voltage (Base open)
Collector current
Collector-base voltage (Emitter open)
Tr2
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
–50
–50
–100
300
150
–55 to +150
(B2)
5
R
1
R
2
R
2
(E2)
4
R
1
Tr2
2
(B1)
3
(C2)
R
1
R
2
R
1
R
2
22
22
22
22
kΩ
kΩ
Electrical Characteristics
T
a
= 25°C±3°C
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 100 µA
–30%
0.8
22
1.0
2.6
0.8
+30%
1.2
60
0.25
Min
50
50
0.1
0.5
0.2
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2010
ZJJ00582BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMG26402
Electrical Characteristics (Continued)
T
a
= 25°C±3°C
Tr2
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Common characteristics chart
DMG26402_PT-Ta
P
T
T
a
350
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
V
CB
= –50 V, I
E
= 0
V
CE
= –50 V, I
B
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –10 V, I
C
= –5 mA
I
C
= –10 mA, I
B
= – 0.5 mA
V
CE
= – 0.2 V, I
C
= –5 mA
V
CE
= –5 V, I
C
= –100 µA
Min
–50
–50
Typ
Max
Unit
V
V
– 0.1
– 0.5
– 0.2
60
– 0.25
–2.6
– 0.8
–30%
0.8
22
1.0
+30%
1.2
µA
µA
mA
V
V
V
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Total power dissipation P
T
(mW)
300
250
200
150
100
50
0
0
40
80
120
160
200
Ambient temperature T
a
(
°C
)
Characteristics charts of Tr1
DMG26402(Tr1)_IC-VCE
I
C
V
CE
120
T
a
=
25°C
100
400
I
B
=
350
µA
300
µA
250
µA
200
µA
60
150
µA
40
20
0
100
µA
50
µA
0
2
4
6
8
10
12
350
300
250
200
DMG26402(Tr1)_hFE-IC
DMG26402(Tr1)_VCEsat-IC
h
FE
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
V
CE
=
10 V
T
a
=
85°C
V
CE(sat)
I
C
I
C
/ I
B
= 20
Forward current transfer ratio h
FE
Collector current I
C
(mA)
80
25°C
1
−30°C
150
100
50
0
0.1
1
10
100
0.1
T
a
=
85°C
−30°C
25°C
0.01
0.1
1
10
100
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
2
ZJJ00582BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
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the products may directly jeopardize life or harm the human body.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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