GSTU8040 datasheet, PDF - EEWORLD Datasheet

GSTU8040: DescriptionPower Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin; CategoryDiscrete semiconductor The transistor; File Size94KB，2 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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GSTU8040 Overview

Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Vishay
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	12 A
Collector-based maximum capacity	300 pF
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	175 W
Maximum power dissipation(Abs)	180 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	25 MHz
Maximum off time (toff)	2900 ns
Maximum opening time (tons)	300 ns
VCEsat-Max	1 V

	GSTU8040	GSTU8030
Description	Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin	Power Bipolar Transistor, 12A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Is it Rohs certified?	incompatible	incompatible
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown	unknown
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	12 A	12 A
Collector-based maximum capacity	300 pF	300 pF
Collector-emitter maximum voltage	400 V	300 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10
JEDEC-95 code	TO-204AA	TO-204AA
JESD-30 code	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	200 °C	200 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power consumption environment	175 W	175 W
Maximum power dissipation(Abs)	180 W	175 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	25 MHz	25 MHz
Maximum off time (toff)	2900 ns	2900 ns
Maximum opening time (tons)	300 ns	300 ns
VCEsat-Max	1 V	1 V

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