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RB521G-30

Description
0.1 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size36KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

RB521G-30 Overview

0.1 A, SILICON, SIGNAL DIODE

RB521G-30 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.35 V
JESD-30 codeR-PDSO-F2
JESD-609 codee2
Humidity sensitivity level1
Maximum non-repetitive peak forward current1 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
Base Number Matches1
RB521G-30
Diodes
Schottky barrier diode
RB521G-30
Application
Rectifying small power
External dimensions
(Units : mm)
1.0±0.05
1.4±0.05
Features
1) Ultra small mold type. (VMD2)
2) High reliability
0.6±0.05
0.27±0.03
CATHODE MARK
0.13±0.03
F
Construction
Silicon epitaxial planer
0.5±0.05
ROHM : VMD2
EIAJ :
JEDEC :
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
Junction temperature
Storage temperature
60Hz, 1cyc.
Symbol
V
R
I
O
I
FSM
Tj
Tstg
Limits
30
100
1
125
−40~+125
Unit
V
mA
A
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
Typ.
Max.
0.350
10
Unit
V
µA
I
F
=10mA
V
R
=10V
Conditions
Please pay attention to static electricity when handling.
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