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UPD44322182F1-A60Y-FQ2

Description
Cache SRAM, 2MX18, 3.5ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165
Categorystorage    storage   
File Size727KB,40 Pages
ManufacturerNEC Electronics
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UPD44322182F1-A60Y-FQ2 Overview

Cache SRAM, 2MX18, 3.5ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165

UPD44322182F1-A60Y-FQ2 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerNEC Electronics
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD44322182, 44322322, 44322362
32M-BIT CMOS SYNCHRONOUS FAST SRAM
PIPELINED OPERATION
SINGLE CYCLE DESELECT
Description
The
µ
PD44322182 is a 2,097,152-word by 18-bit,
µ
PD44322322 is a 1,048,576-word by 32-bit and the
µ
PD44322362 is
a 1,048,576-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-
transistor memory cell.
The
µ
PD44322182,
µ
PD44322322 and
µ
PD44322362 integrates unique synchronous peripheral circuitry, 2-bit burst
counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single clock
input (CLK).
The
µ
PD44322182,
µ
PD44322322 and
µ
PD44322362 are suitable for applications which require synchronous operation,
high speed, low voltage, high density and wide bit configuration, such as buffer memory.
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In
the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation.
The
µ
PD44322182,
µ
PD44322322 and
µ
PD44322362 are packaged in 100-pin PLASTIC LQFP with a 1.4 mm package
thickness or 165-pin PLASTIC FBGA for high density and low capacitive loading.
Features
3.3 V or 2.5 V core supply
Synchronous operation
Operating temperature : T
A
= 0 to 70 °C (-A44, -A50, -A60, -C50, -C60)
T
A
= –40 to +85 °C (-A44Y, -A50Y, -A60Y, -C50Y, -C60Y)
Internally self-timed write control
Burst read / write : Interleaved burst and linear burst sequence
Fully registered inputs and outputs for pipelined operation
Single-Cycle deselect timing
All registers triggered off positive clock edge
3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs
Fast clock access time : 2.8 ns (225 MHz), 3.1 ns (200 MHz), 3.5 ns (167 MHz)
Asynchronous output enable : /G
Burst sequence selectable : MODE
Sleep mode : ZZ (ZZ = Open or Low : Normal operation)
Separate byte write enable : /BW1 to /BW4, /BWE (
µ
PD44322322,
µ
PD44322362)
/BW1, /BW2, /BWE (
µ
PD44322182)
Global write enable : /GW
Three chip enables for easy depth expansion
Common I/O using three state outputs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
Document No. M16355EJ1V0DS00 (1st edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002

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