M5M5512KR-10VLL datasheet, PDF

M5M5512KR-10VLL: DescriptionStandard SRAM, 64KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, REVERSE, TSOP-32; Categorystorage storage; File Size99KB，1 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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M5M5512KR-10VLL Overview

Standard SRAM, 64KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, REVERSE, TSOP-32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Mitsubishi
Parts packaging code	TSOP
package instruction	SOP, TSSOP32,.56,20
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	100 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
memory density	524288 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	TSSOP32,.56,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3/3.3 V
Certification status	Not Qualified
reverse pinout	YES
Maximum standby current	0.00001 A
Minimum standby current	2 V
Maximum slew rate	0.02 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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