to GND ................................................ -0.3V to +6V
OUT_, REF to GND .................................... -0.3V to the lower of
(V
DD
+ 0.3V) and +6V
SCL, SDA,
CLR
to GND .......................................... -0.3V to +6V
ADDR to GND .............................................-0.3V to the lower of
(V
DDIO
+ 0.3V) and +6V
Continuous Power Dissipation (T
A
= +70NC)
µMAX (derate at 8.8mW/NC above 70NC)....................707mW
TDFN (derate at 24.4mW/NC above 70NC) ................1951mW
Maximum Continuous Current into Any Pin ....................
Q50mA
Operating Temperature Range ........................ -40NC to +125NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) .................................... +260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
µMAX
Junction-to-Ambient Thermal Resistance (θ
JA
) .......113NC/W
Junction-to-Case Thermal Resistance (θ
JC
) ..............42NC/W
TDFN
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........41NC/W
Junction-to-Case Thermal Resistance (θ
JC
) ................9NC/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
DD
= 2.7V to 5.5V, V
DDIO
= 1.8V to 5.5V, V
GND
= 0V, C
L
= 200pF, R
L
= 2kI, T
A
= -40NC to +125NC, unless otherwise noted. Typical
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