< Silicon RF Power MOS FET (Discrete)
>
RD06HHF1
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,6W
OUTLINE
DRAWING
9.1+/-0.7
3.2+/-0.4
DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
1.3+/-0.4
3.6+/-0.2
High power gain:
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
4.8MAX
9+/-0.4
FEATURES
12.3+/-0.6
2
1.2+/-0.4
0.8+0.10/-0.15
APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
12.3MIN
1
2 3
0.5+0.10/-0.15
2.5 2.5
3.1+/-0.6
5deg
4.5+/-0.5
RoHS COMPLIANT
RD06HHF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperaturetype solders.
However,it is applicable to the following exceptions of RoHS Directions.
9.5MAX
note:
Torelance of no designation means typical value.
Dimension in mm.
PINS
1:GATE
2:SOURCE
3:DRAIN
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete)
>
RD06HHF1
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,6W
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
-
-
-
junction to case
CONDITIONS
RATINGS
50
+/- 20
27.8
0.3
3
150
-40 to +150
4.5
UNIT
V
V
W
W
A
°C
°C
°C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
V
TH
Pout
D
PARAMETER
Drain cutoff current
Gate cutoff current
Gate threshold Voltage
Output power
Drain efficiency
Load VSWR tolerance
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=12.5V, Pin=0.15W,
f=30MHz, Idq=0.5A
V
DD
=15.2V,Po=6W(Pin Control)
f=30MHz,Idq=0.5A,Zg=50
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
LIMITS
MIN
-
-
1.9
6
55
TYP
-
-
-
10
65
No destroy
MAX.
10
1
4.9
-
-
uA
uA
V
W
%
-
UNIT
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete)
>
RD06HHF1
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,6W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
Vgs-Ids CHARACTERISTICS
5
4
3
2
1
0
Ta=+25°C
Vds=10V
50
CHANNEL DISSIPATION
Pch(W)
40
Ids(A)
30
20
10
0
0
40
80
120 160 200
AMBIENT TEMPERATURE Ta(°C)
0
2
4
6
Vgs(V)
8
10
Vds-Ids CHARACTERISTICS
4
Ta=+25°C
Vgs=10V
Vds VS. Ciss CHARACTERISTICS
60
50
Ciss(pF)
Ta=+25°C
f=1MHz
3
Ids(A)
Vgs=9V
40
30
20
10
0
0
10
Vds(V)
20
30
Vgs=8V
2
Vgs=7V
1
Vgs=6V
Vgs=5V
0
0
2
4
6
Vds(V)
8
10
Vds VS. Coss CHARACTERISTICS
100
80
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
10
8
Crss(pF)
Ta=+25°C
f=1MHz
60
40
20
0
0
10
Vds(V)
20
30
6
4
2
0
0
10
Vds(V)
20
30
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete)
>
RD06HHF1
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,6W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
50
40
30
20
10
Ｉ½½
Gp
Ta=+25°C
f=30MHz
Vdd=12.5V
Idq=0.5A
Pin-Po CHARACTERISTICS
100
14
12
Pout(W) , Idd(A)
Po
100
90
80
ηd
Po
Po(dBm) , Gp(dB) ,
Idd(A)
80
η½
10
8
6
4
2
0
0.0
0.1
Pin(W)
0.2
0.3
Idd
Ta=25°C
f=30MHz
Vdd=12.5V
Idq=0.5A
ηd(%)
40
20
0
60
50
40
30
0
-10
0
10
Pin(dBm)
20
Vdd-Po CHARACTERISTICS
16
14
12
Po(W)
Ta=25°C
f=30MHz
Pin=0.15W
Idq=0.5A
Zg=ZI=50 ohm
Vgs-Ids CHARACTORISTICS 2
4
5
4
Ids(A),GM(S)
Vds=10V
Tc=-25~+75°C
-25°C
+25°C
3
Po
8
6
4
2
0
4
6
8
10
Vdd(V)
12
14
Idd
2
Idd(A)
10
3
2
1
0
0
2
4
6
Vgs(V)
8
+75°C
1
0
10
Vgs-
g
m CHARACTORISTICS
2.0
Vds=10V
Tc=-25~+75°C
1.5
g
m(S)
1.0
-25°C
+25°C
0.5
+75°C
0.0
0
1
2
3
4 5 6
Vgs(V)
7
8
9
Publication Date : Oct．2011
4
ηd(%)
60
70
< Silicon RF Power MOS FET (Discrete)
>
RD06HHF1
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,6W
TEST CIRCUIT(f=30MHz)
Vgg
Vdd
330uF,50V
C1
L2
8.2Kohm
220pF
100pF
1Kohm
C2
RF-IN
1ohm
220pF
150/120pF
56pF
100pF
L5
L3
L4
C1
C1
84pF
10uF,50V*3pcs
C1
L1
56pF
30pF
RF-OUT
L6
C2
100pF
200/200pF
5
16
35
46
65
75
77.5
88
91
100
C1:100pF, 0.022uF, 0.1uF in parallel
C2:470pF*2 in parallel
L1:10Turns,I.D8mm,D0.9mm copper wire
L2:10Turns,I.D6mm,D1.6mm silver plated copper wire
L3:5Turns,I.D5.6mm,D0.9mm copper wire
L4:6Turns,I.D5.6mm,D0.9mm copper wire
L5:4Turns,I.D5.6mm,D0.9mm copper wire P=0.5mm
L6:7Turns,I.D5.6mm,D0.9mm copper wire
1.5
18
36
42
45
67
75
91
100
Dimensions:mm
Note:Board material PTFE substrate
micro strip line width=4.2mm/50ohm,er:2.7,t=1.6mm
Publication Date : Oct．2011
5
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