< Silicon RF Power MOS FET (Discrete)
>
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
DESCRIPTION
RD12MVP1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
OUTLINE DRAWING
0.2+/-0.05
8.0+/-0.2
(a)
(b)
0.65+/-0.2
(b)
7.0+/-0.2
6.2+/-0.2
5.6+/-0.2
(d)
FEATURES
•High Power Gain
Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
•High Efficiency: 55%min. (175MHz)
•No gate protection diode
INDEX MARK
[Gate]
4.2+/-0.2
(3.6)
(4.5)
0.95+/-0.2
2.6+/-0.2
(c)
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
0.7+/-0.1
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
SIDE VIEW
Standoff = max 0.05
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD12MVP1 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DSS
V
GSS
ID
Pin
Pch
Tj
Tstg
Rthj-c
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Channel Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
(Tc=25°C, UNLESS OTHERWISE NOTED)
CONDITIONS
V
GS
=0V
V
DS
=0V
RATINGS
50
-5 to +20
4.0
Zg=Zl=50
Tc=25
°C
1.0
125
+150
-40 to +125
Junction to Case
1.5
UNIT
V
V
A
W
W
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete)
>
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
TH
Pout
D
PARAMETER
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
CONDITIONS
LIMITS
MIN.
-
-
1.8
10
55
TYP.
-
-
-
12
57
MAX.
10
1.0
4.4
-
-
uA
uA
V
W
%
UNIT
Zero Gate Voltage Drain Current V
DS
=17V, V
GS
=0V
Gate to Source Leak Current
Gate Threshold Voltage
Output Power
Drain Efficiency
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=175MHz,V
DD
=7.2V
Pin=0.5W,Idq=1.0A
V
DD
=9.5V,Po=10W(Pin Control)
VSWRT Load VSWR tolerance
f=175MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
No destroy
-
Note: Above parameters, ratings, limits and conditions are subject to change.
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete)
>
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
TYPICAL CHARACTERISTICS
60
CHANNEL DISSIPATION Pch(W)
,,,
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
*PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm)
Thermal sheet: GELTEC COOH-4000(t=0.5mm)
Vgs-Ids CHARACTERISTICS
7
6
5
Ids(A)
Ta=+25°C
Vds=10V
Ids
50
40
30
20
10
0
0
4
3
2
On PCB with Termal sheet
and Heat-sink
(Size : 41 x 55mm, t=7.2 mm)
Free Air
1
0
40
80
120
160
AMBIENT TEMPERATURE Ta(deg:C.)
200
0
1
2
3
4
Vgs(V)
5
6
7
Vds-Ids CHARACTERISTICS
9
Ta=+25°C
Vds VS. Ciss CHARACTERISTICS
160
Vgs=7.5V
Ta=+25°C
f=1MHz
8
7
6
Ids(A)
140
120
5
4
3
2
1
0
0
1
2
3
4
5
Vds(V)
6
7
8
9
Vgs=6.5V
Ciss(pF)
100
80
60
40
20
0
0
5
10
Vds(V)
15
20
Vgs=5.5V
Vgs=4.5V
Vds VS. Coss CHARACTERISTICS
160
140
120
Coss(pF)
Crss(pF)
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
20
18
16
14
12
10
8
6
4
2
0
Ta=+25°C
f=1MHz
100
80
60
40
20
0
0
5
10
Vds(V)
15
20
0
5
10
Vds(V)
15
20
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete)
>
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz
14
40
Po(dBm) , Gp(dB) , Idd(A)
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=1.0A
Po
Pin-Po CHARACTERISTICS @f=175MHz
90
Po
80
12
Pout(W) , Idd(A)
80
70
ηd(%)
ηd
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=1.0A
Idd
30
η
½
Gp
60
ηd(%)
10
8
6
4
2
60
50
40
30
20
1.5
20
40
10
Ｉ½½
20
0
0
5
10
15
20
Pin(dBm)
25
30
0
0
0.0
0.5
Pin(W)
1.0
Vdd-Po CHARACTERISTICS @f=175MHz
30
Ta=25°C
f=175MHz
Pin=0.6W
Idq=1.0A
Zg=ZI=50 ohm
Po
6
25
20
5
Idd
Po(W)
15
10
3
2
5
4
6
8
Vdd(V)
10
12
1
Publication Date : Oct．2011
4
Idd(A)
4
< Silicon RF Power MOS FET (Discrete)
>
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
TEST CIRCUIT (f=175MHz)
Vgg
C1
C2
W
Vdd
19mm
W
19mm
22μF,50V
47pF
RF-in
330pF
100pF
4.7kOHM
L1
3mm
12mm
RD12MVP1
175MHz
9.5mm
L2
3mm
47pF
14mm
9mm
RF-OUT
330pF
17mm
3.5mm
24pF
68pF
Note:Boad material Glass-Epoxy substrate
Micro strip line width=1.3mm/50 OHM、er:4.8、t=0.8mm
W:Line width=1.0mm
L:Enameled Wire
L1:4Turns、D:0.43mm、φ1.66mm(outside diameter)
L2:6Turns、D:0.43mm、φ2.46mm(outside diameter)
C1、C2:2200½F
Publication Date : Oct．2011
5
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