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RD12MVS1_11

Description
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
File Size559KB,8 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet View All

RD12MVS1_11 Overview

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W

< Silicon RF Power MOS FET (Discrete)
>
RD12MVS1
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
OUTLINE DRAWING
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
DESCRIPTION
RD12MVS1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
6.0+/-0.15
0.2+/-0.05
1
4.9+/-0.15
1.0+/-0.05
FEATURES
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
2
3
INDEX MARK
(Gate)
(0.22)
(0.25)
(0.25)
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD12MVS1-101,T112
is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
ID
Pin
Pch
Tj
Tstg
Rthj-c
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Channel Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Junction to Case
Zg=Zl=50
Tc=25
°C
V
GS
=0V
V
DS
=0V
CONDITIONS
RATINGS
50
+/- 20
4
2
50
150
-40 to +125
2.5
UNIT
V
V
A
W
W
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
Publication Date : Oct.2011
1
3.5+/-0.05
2.0+/-0.05
(0.22)

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