UPT5Re3 – UPT48Re3
UPTB5e3 – UPTB48e3
SCOTTSDALE DIVISION
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSORS
DESCRIPTION
Microsemi’s new Powermite UPT series transient voltage suppressors
feature oxide-passivated chips, with high-temperature solder bonds for high
surge capability, and negligible electrical degradation under repeated surge
conditions. Both unidirectional and bidirectional configurations are available.
In addition to its size advantages, Powermite package includes a full
metallic bottom (cathode) that eliminates the possibility of solder flux
entrapment at assembly and a unique locking tab serving as an integral heat
sink.
Innovative design makes this device fully compatible for use with automatic
insertion equipment.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-216AA
FEATURES
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Powermite Package with standoff voltages 5 to 48 V
Both unidirectional and Bidirectional Versions
Available as “UPTxxRe3” & “UPTBxxe3” respectively
Peak Pulse Power 1000 W for 8/20 µs pulse
Clamping Time in pico-seconds
Integral heat sink / locking tabs
Full metallic bottom eliminates flux entrapment
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, or JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers, e.g. MXUPT15Re3,
MVUPTB28e3, MSPUPT10Re3, etc.
RoHS Compliant with e3 suffix part number
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APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s,
2
CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced
RF
New improved lower leakage current for the
UPT5Re3 & UPTB5e3
Compliant to IEC61000-4-2 and IEC61000-4-4
for ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: UPT5R/UPTB5 to UPT17R/UPTB17
Class 2: UPT5R/UPTB5 to UPT12R/UPTB12
(also add e3 suffix to each part number)
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MAXIMUM RATINGS
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Operating and Storage Temperature: –65ºC to
+150ºC
Peak Pulse Power at 8/20 µs (See Figure 1 and 2)
UPT5Re3 & UPTB5e3:
600 Watts
UPT8Re3 thru UPT48Re3: 1000 Watts
UPTB8e3 thru UPTB48e3: 1000 Watts
Peak Pulse Power at 10/1000 µs (See Figure 2).
UPT5Re3 & UPTB5e3:
100 Watts
UPT8Re3 thru UPT48Re3: 150 Watts
UPTB8e3 thru UPTB48e3: 150 Watts
Impulse Repetition Rate (duty factor): 0.01%
Thermal resistance: 15ºC/W junction to base tab or
240ºC/W junction to ambient when mounted on FR4
PC board with 1 oz copper
Steady-State Power: 2.5 Watts (base tab
≤112ºC)
Solder Temperatures: 260ºC for 10 s (maximum)
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MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy compound meeting UL94V-0
FINISH: Annealed matte-Tin plating over copper
and readily solderable per MIL-STD-750, method
2026
POLARITY: Cathode to case (bottom TAB 1)
MARKING: The last three digits of part number,
e.g. UPT5R is T05▪, UPT12R is T12▪, UPT24 is
T24▪, UPTB5 is TB05▪, UPTB12 is B12▪, UPTB24
is B24▪, etc. Please note dot suffix (for e3 suffix)
WEIGHT: 0.016 gram (approximate)
See package dimension on last page
Tape & Reel option: Standard per EIA-481-B
using 12 mm tape with 3,000 per 7 inch reel or
12,000 per 13 inch reel (add TR7 or TR13 suffix to
part number)
UPT5Re3 - UPT48Re3
UPTB5e3 - UPTB48e3
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Copyright
©
2006
10-04-2006 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
UPT5Re3 – UPT48Re3
UPTB5e3 – UPTB48e3
SCOTTSDALE DIVISION
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSORS
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS @ 25
o
C
DEVICE TYPE
RATED
STANDOFF
VOLTAGE
V
WM
Unidirectional
UPT5Re3
UPT8Re3
UPT10Re3
UPT12Re3
UPT15Re3
UPT17Re3
UPT24Re3
UPT28Re3
UPT33Re3
UPT48Re3
Bi-directional
UPTB5e3
UPTB8e3
UPTB10e3
UPTB12e3
UPTB15e3
UPTB17e3
UPTB24e3
UPTB28e3
UPTB33e3
UPTB48e3
V
5
8
10
12
15
17
24
28
33
48
MINIMUM
BREAKDOWN
VOLTAGE
V
(BR)
@ 1 mA
V
6.0
9.0
11.0
13.8
16.7
19.0
28.4
31.0
36.8
54.0
MAXIMUM
STANDBY
CURRENT
MAXIMUM
PEAK
PULSE
CURRENT*
I
PP
A
60
62.1
47.2
40.3
33.9
30.8
22.0
19.2
16.4
11.2
MAXIMUM
CLAMPING
VOLTAGE
V
C
@ 10A*
V
9.5
13.7
18.0
21.6
26.0
29.2
43.2
47.8
56.7
84.3
MAXIMUM
TEMP.
COEFFICIENT
of V
(BR)
I
D
@ V
WM
μA
5
2
2
1
1
1
1
1
1
1
α
V(BR)
%/ C
.030
.040
.045
.050
.055
.060
.070
.075
.080
.090
o
* See Figure 1 for I
PP
waveform of 8/20
µs
Symbol
V
(BR)
V
WM
P
PP
I
D
I
PP
C
SYMBOLS & DEFINITIONS
Definition
Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Standoff Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Peak Pulse Power: The peak power that can be applied for a specified pulse width and waveform.
Standby Current: The maximum current that will flow at the specified voltage and temperature.
Peak Pulse Current: The peak current that can be applied for a specified pulse width and waveform.
Capacitance: The capacitance in picofarads of the TVS as defined @ 0 volts at a frequency of 1 MHz.
OUTLINE AND CIRCUIT
l
P
– PULSE CURRENT – (% of I
PP
)
P
PP
– PEAK PULSE POWER – (kW)
tp: Pulse time duration is defined as
that point where the pulse current
decays to 50% of I
PP
.
(Rise time to 100% of I
PP
= 8μs.)
EXPONENTIAL PULSE
(Pulse time duration is defined as
that point where the pulse current
decays to 50% of I
PP
.)
UPT5Re3 - UPT48Re3
T5Re3 - UPT48Re3
UPTB5e3 - UPTB48e3
UPTB5e3 - UPTB48e3
t – TIME – (μs)
tp – PULSE TIME
FIGURE 1
Pulse Waveform for Exponential Surge
FIGURE 2
Peak Pulse Power vs. Pulse Duration
Copyright
©
2006
10-04-2006 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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