MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54566DP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54566DP is seven-circuit collector current sink type
darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated
circuits perform high-current driving with extremely low
input-current supply.
PIN CONFIGURATION
IN1→ 1
IN2→ 2
IN3→ 3
16 →O1
15 →O2
14 →O3
13 →O4
12 →O5
11 →O6
10 →O7
9
V
CC
INPUT
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
GND
8
OUTPUT
FEATURES
●High
breakdown voltage (BV
CEO
> 50V)
●High-current
driving (Ic(max) = 400mA)
●Active
L-level input
APPLICATIONS
Interfaces between microcomputers and high-voltage,
high-current drive systems, drives of relays and printers,
and MOS-bipolar logic IC interfaces.
Package type 16P2X-B
CIRCUIT DIAGRAM
FUNCTION
The M54566 is produced by adding PNP transistors to
M54522 inputs. Seven circuits having active L-level inputs
are provided.
Resistance of 8kΩ is provided between each input and
PNP transistor base. The input emitters are connected to
V
CC
pin (pin 9). Output transistor emitters are all
connected to the GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter
supply voltage is 50V maximum.
These ICs are optimal for drivers that are driven with N-
MOSIC output and absorb collector current.
V
CC
20K
INPUT
2.7K
8K
7.2K
3K
OUTPUT
GND
The seven circuits share the V
CC
and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:Ω
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –20 ~ +75℃)
Symbol
V
CC
V
CEO
I
C
V
I
P
d
T
opr
T
stg
Parameter
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output , H
Current per circuit output, L
Ta = 25℃, when mounted on board
Ratings
10
– 0.5
½
+ 50
400
– 0.5
½
V
CC
1.00
– 20
½
+ 75
– 55
½
+ 125
Unit
V
V
mA
V
W
℃
℃
Jul-2011
MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54566DP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
O
Supply voltage
Output voltage
Collector current (Current per 1
circuit when 7 circuits are
coming on simultaneously)
V
CC
=5V
Parameter
min
4
0
Limits
typ
5
－
－
－
－
－
max
8
50
350
Unit
V
V
I
C
Duty Cycle
no more than 6%
Duty Cycle
no more than 20%
0
0
V
CC
-0.2
0
mA
200
V
CC
V
CC
－3
V
V
V
IH
V
IL
“H” input voltage
“L” input voltage
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta =
－20½＋75℃）
Symbol
V
(BR)CEO
V
CE(sat)
I
I
I
CC
h
FE
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Input current
Supply current (one circuit
coming on)
DC amplification factor
Test conditions
I
CEO
= 100μA
V
I
= V
CC
－3V
V
I
= V
CC
－3.5V
V
CC
= 5V, V
I
= V
CC
－3.5V
V
CE
= 4V, V
CC
= 5V, I
C
= 350mA, Ta = 25℃
I
C
= 350mA
I
C
= 200mA
min
50
－
－
－
－
2000
Limits
typ
＊
－
1.1
0.9
－0.3
1.4
10000
max
－
2.2
1.6
－0.58
3.0
－
Unit
V
V
mA
mA
－
*：The
typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25℃）
Symbol
t
on
t
off
Parameter
Turn－on time
Turn－off time
Test conditions
min
C
L
= 15pF（note 1）
－
－
Limits
typ
95
2500
max
－
－
½½
½½
Unit
NOTE 1 TEST CIRCUIT
INPUT
V
CC
Measured
device
PG
50Ω
C
L
V
O
TIMING DIAGRAM
R
L
OUTPUT
INPUT
50%
50%
OUTPUT
50%
50%
½
on
(1) Pulse generator (PG) characteristics: PRR = 1kHz,
tw = 10μs, tr = 6ns, tf = 6ns, Z
O
= 50Ω ,V
I
= 1 to 4V
(2) Input-output conditions : R
L
= 30Ω, V
O
= 10V, V
CC
= 4V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
½
off
Jul-2011
2
MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54566DP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
2.0
400
V
CC
=4V
V
I
=1V
Output Saturation Voltage
Collector current Characteristics
Power dissipation P
d
(W)
1.5
Collector current I
C
(mA)
300
Ta=75℃
200
Ta=25℃
Ta=-20℃
100
M54566DP
1.0
0.5
0
0
25
50
75
100
0
0
0.5
1.0
1.5
2.0
Ambient temperature Ta(℃)
Output saturation voltage V
CE(sat)
(V)
Duty-Cycle-Collector current Characteristics
500
Duty-Cycle-Collector current Characteristics
500
Collector current I
C
(mA)
400
①
Collector current I
C
(mA)
400
300
②
200
•The collector current values
represent the current per circuit.
•Repeated frequency > 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Vcc=5V •Ta = 25℃
300
①
③
④
⑤
⑥
⑦
200
•The collector
current values
represent the current per circuit.
•Repeated frequency > 10Hz
•The value in the circle represents the value of the
simultaneously-operated circuit.
•Vcc=5V •Ta = 75℃
②
③
④
⑤
⑥
⑦
100
100
0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
DC Amplification Factor
Collector Current Characteristics
V
CC
=4V
V
CE
=4V
Duty cycle (%)
Grounded Emitter Transfer Characteristics
400
V
CC
=4V
V
CE
=4V
300
10
4
7
DC amplification factor h
FE
5
3
2
3
7
5
3
2
Collector current I
C
(mA)
Ta=75℃
Ta=25℃
Ta=-20℃
Ta=75℃
Ta=25℃
10
200
Ta=-20℃
100
10
2 1
10
2
3
5
7
10
2
2
3
5
7
10
3
0
0
0.4
0.8
1.2
1.6
Collector current I
C
(mA)
Supply voltage-Input voltage V
CC
-V
I
(V)
Jul-2011
3
MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54566DP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
Input Characteristics
-1.0
5
V
CC
=8V
Supply Current Characteristics
V
I
=0V
-0.8
Supply current
I
CC
(mA)
4
Ta=-20℃
3
Input current I
I(
mA)
-0.6
Ta=-20℃
-0.4
Ta=25℃
Ta=25℃
2
Ta=75℃
1
-0.2
Ta=75℃
0
0
1
2
3
4
5
0
0
2
4
6
8
10
Supply voltage-Input voltage V
CC
-V
I
(V)
Supply Voltage V
CC
(V)
Jul-2011
4
MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54566DP
PRELIMINARY
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
PACKAGE OUTLINE
Jul-2011
5
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