MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V5258
5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC42V5258 is an internally impedance-matched
GaAs power FET especially designed for use in 5.2 - 5.8
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE DRAWING
Unit: millimeters
24+/-0.3
R1.25
2MIN
(1)
0.6+/-0.15
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 16W (TYP.) @ f=5.2 - 5.8 GHz
High power gain
GLP = 10.5 dB (TYP.) @ f=5.2 - 5.8GHz
High power added efficiency
P.A.E. = 31 % (TYP.) @ f=5.2 - 5.8GHz
R1.2
17.4+/-0.3
8.0+/-0.2
(2)
2MIN
(3)
20.4+/-0.2
13.4
0.1
1.4
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
APPLICATION
5.2 - 5.8 GHz band power amplifier
QUALITY GRADE
IG
4.0+/-0.4
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 4.5 (A)
RG=25 (ohm)
GF-18
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
*1
(Ta=25deg.C)
Ratings
-15
-15
15
-40
84
78.9
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
Symbol
IDSS
gm
VGS(off)
P1dB
GLP
ID
P.A.E.
Rth(ch-c)
(Ta=25deg.C)
Test conditions
VDS = 3V , VGS = 0V
VDS = 3V , ID = 4.4A
VDS = 3V , ID = 80mA
Min.
-
-
-2
41.5
VDS=10V, ID(RF off)=4.5A, f=5.2 - 5.8GHz
8
-
-
Limits
Typ.
9
4
-3
42.5
10.5
4.5
31
-
Unit
Max.
12
-
-4
-
-
-
-
1.9
A
S
V
dBm
dB
A
%
deg.C/W
Parameter
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain
compression
Linear power gain
Drain current
Power added efficiency
Thermal resistance
*1
delta Vf method
-
*1 : Channel-case
MITSUBISHI
ELECTRIC
2.4+/-0.2
June/2004
15.8
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