MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
Outline Drawing
DESCRIPTION
MGFS36E2527 is a GaAs RF amplifier designed
for WiMAX CPE.
4.5
1.0
FEATURES
•
•
•
•
•
•
•
•
•
InGaP HBT Device
6V Operation
27dBm Linear Output Power
33dB Linear Gain
Integrated Output Power Detector
Integrated 1-bit 19dB Step Attenuator
50ohms Matched
Surface Mount Package
RoHS Compliant Package
4.5
36E
2527
(Lot No.)
10
9
8
7
6
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
1
2
3
4
5
1
2
3
4
5
6
7
8
9
10
Pin
Vc (Vcb)
Vc (Vc1)
Vc (Vc2)
Vc (Vc3)
Pout
Po_det
GND
Vref
Vcont
DIM IN mm
(X-ray Top View)
FUNCTIONAL BLOCK DIAGRAM
Vc1
1000pF
Vc2
Vc3
1000pF
1000pF
Pin
Vcont
(0/3V)
Vcb
1000pF
Pout
Bias Circuit
Vref
Po_det
33kohms
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give
due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits,
(ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/7)
January-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
Conditions*
Pout≤27.0dBm
Pout≤27.0dBm
Pout≤27.0dBm
Value
8
3
3.3
80
Unit
V
V
V
mA
mA
mA
dBm
%
°C
°C
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
Symbol
Vc1, Vc2
Vc3, Vcb
Vref
Vcont
Ic1
Ic2
Ic3
Pin
-
Tc(op)
Tstg
Input Power
Duty Cycle
Operation Temperature
Storage Temperature
Pout≤27.0dBm
Pout≤27.0dBm
Pout≤27.0dBm
-
Operation Current
Pout≤27.0dBm
Parameter
Collector Supply Voltage
Reference Voltage
ATT Control Voltage
250
900
5
50
-30~+85
-40~+125
*NOTE : Zin=Zout=50Ω
Each maximum rating is guaranteed independently.
Please take care that MGFS36E2527 is operated under these conditions at the worst
case on your terminal.
ELECTRICAL CHARACTERISTICS
(Ta=25°C)
Symbol
f
Gp
ηt
EVM
Vdet
ATT
Ileak
Parameter
Frequency
Gain
Efficiency
EVM
Power Detector Voltage
Control Gain Step
Leakage Current
Test Conditions*
Min
-
Vc=6V, Vref=2.85V
Pout=27dBm
64QAM OFDM Modulation
Duty Cycle < 50%
Vcont=3V
Vc=6V, Vref=0V
2.5
33
12
2.5
2.0
19
10
Limits
Typ
Max
2.7
GHz
dB
%
%
V
dB
µA
Unit
*NOTE : Zin=Zout=50Ω
ESD RATING
- Class 1A (HBM)
MOISTURE SENSITIVITY LEVEL
- Level 3
THERMAL RESISTANCE
:
30°C/W
MITSUBISHI ELECTRIC CORP.
(2/7)
January-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
PERFORMANCE DATA
WiMAX OFDM 64QAM signal input. Ta=25degC.
Output Power vs. Input Power
30
Vc=6V
Vref=2.85V
Vcont=0V
Output Power (dBm)
25
Efficiency (%)
Efficiency vs. Output Power
20
18
16
14
12
10
8
6
2.5GHz
2.6GHz
2.7GHz
4
2
0
0
10
15
20
Output Power (dBm)
25
2.5GHz
2.6GHz
2.7GHz
30
Vc=6V
Vref=2.85V
Vcont=0V
20
15
10
-20
-15
-10
Input Power (dBm)
-5
EVM vs. Output Power
6.0
5.5
5.0
4.5
4.0
EVM (%)
Vc=6V
Vref=2.85V
Vcont=0V
2.5GHz
2.6GHz
2.7GHz
Detector Voltage vs. Output Power
3.0
2.5
2.0
Vdet (V)
1.5
1.0
0.5
0.0
2.5GHz
2.6GHz
2.7GHz
10
15
20
Output Power (dBm)
25
30
Vc=6V
Vref=2.85V
Vcont=0V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
15
20
Output Power (dBm)
25
30
Attenuation Performance
40
Vc=6V
Vref=2.85V
30
S21 (dB)
Vcont=0V
Vcont=3V
20
10
0
2.0
2.2
2.4
2.6
2.8
3.0
Frequency (GHz)
MITSUBISHI ELECTRIC CORP.
(3/7)
January-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
WiMAX OFDM 64QAM signal input.
Output Power vs. Input Power
30
f =2.6GHz
Vc=6V
Vref=2.85V
Vcont=0V
Efficiency (%)
Efficiency vs. Output Power
20
18
16
14
12
10
8
6
4
2
0
0
10
15
20
Output Power (dBm)
25
-30degC
0degC
25degC
60degC
85degC
30
f =2.6GHz
Vc=6V
Vref=2.85V
Vcont=0V
Output Power (dBm)
25
20
15
-30degC
0degC
25degC
60degC
85degC
-20
-15
-10
Input Power (dBm)
-5
10
EVM vs. Output Power
6.0
5.5
5.0
4.5
4.0
EVM (%)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
15
20
Output Power (dBm)
25
-30degC
0degC
25degC
30
60degC
85degC
3.5
f =2.6GHz
Vc=6V
Vref=2.85V
Vcont=0V
Detector Voltage vs. Output Power
3.0
2.5
2.0
Vdet (V)
1.5
1.0
0.5
0.0
10
15
20
Output Power (dBm)
25
30
-30degC
0degC
25degC
60degC
85degC
f =2.6GHz
Vc=6V
Vref=2.85V
Vcont=0V
Attenuation Level
22
21
Attenuation Level (dB)
20
19
18
17
16
-30
0
30
60
Case Temperature (degC)
90
f=2.6GHz
Vc=6V
Vref=2.85V
MITSUBISHI ELECTRIC CORP.
(4/7)
January-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
WiMAX OFDM 64QAM signal input. Ta=25degC.
Output Power vs. Input Power
30
f =2.6GHz
Vc=6V
Vcont=0V
Output Power (dBm)
25
Efficiency (%)
Efficiency vs. Output Power
20
18
16
14
12
10
8
6
f =2.6GHz
Vc=6V
Vcont=0V
20
15
Vref=2.75V
Vref=2.85V
Vref=2.95V
-20
-15
-10
Input Power (dBm)
-5
0
4
2
0
10
15
20
Output Power (dBm)
25
Vref=2.75V
Vref=2.85V
Vref=2.95V
30
10
EVM vs. Output Power
6.0
5.5
5.0
4.5
4.0
EVM (%)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
15
20
Output Power (dBm)
25
30
3.5
f =2.6GHz
Vc=6V
Vcont=0V
Vref=2.75V
Vref=2.85V
Vref=2.95V
Detector Voltage vs. Output Power
3.0
2.5
2.0
Vdet (V)
1.5
1.0
0.5
0.0
10
15
20
Output Power (dBm)
25
30
Vref=2.75V
Vref=2.85V
Vref=2.95V
f =2.6GHz
Vc=6V
Vcont=0V
Attenuation Level
22
21
Attenuation Level (dB)
20
19
18
17
16
2.7
2.8
2.9
Reference Voltage (V)
3.0
f=2.6GHz
Vc=6V
MITSUBISHI ELECTRIC CORP.
(5/7)
January-2008
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