S6189F6
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
thru
S6189F10
9 Amp
Fast Recovery Rectifier
600 - 1000 Volts
Features
:
Fast Recovery: 250 nsec Maximum
PIV to 1000 Volts
Low Reverse Leakage Current
Hermetically Sealed Ministud Packages
Single Chip Construction
High Surge Rating
Low Thermal Resistance
TX, TXV, and Space Level Screening Available
Available in Ultrafast and Hyperfast Versions
Designer’s Data Sheet
Part Number/Ordering Information
1/
S6189F
__ __ __
│ │ └
Screening
3/
│ │
__
= Not Screened
TX = TX Level
│ │
TXV = TXV
│ │
S = S Level
│ │
│ └
Package
C = Ministud
│
V = Isolated Ministud
│
└
Voltage
6 = 600V
8 = 800V
10 = 1000V
Maximum Ratings
2/
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
C
≤
100°C)
S6189F6C, V
S6189F8C, V
S6189F10C, V
Symbol
V
RRM
V
RWM
V
R
I
O
I
FSM
T
OP
& T
STG
“V” Isolated
“C” Hot Case
R
θJC
Value
600
800
1000
9
125
-65 to +175
7.5
4.5
Ministud (C)
Units
Volts
Amps
Amps
°C
°C/W
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
C
≤
100°C)
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
Notes:
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Unless otherwise specified, all electrical characteristics @ 25°C
3/ Screening based on MIL-PRF-19500. Screening flows available on request.
Isolated
Ministud (V)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00017E
DOC
S6189F6
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
thru
S6189F10
Symbol
V
F
V
F
I
R
I
R
C
J
t
RR
Electrical Characteristics
Instantaneous Forward Voltage Drop
(I
F
= 9 Adc, T
A
= 25°C, 300
μs
pulse)
Instantaneous Forward Voltage Drop
(I
F
= 9 Adc, T
A
= -55
°
C, 300
μs
pulse)
Reverse Leakage Current
(Rated V
R
, T
A
= 25°C, 300
μs
minimum pulse)
Reverse Leakage Current
(Rated V
R
, T
A
= 100°C, 300
μs
minimum pulse)
Junction Capacitance
(V
R
= 10 V
DC
, T
A
= 25°C, f = 1 MHz)
Reverse Recovery Time
(I
F
= 500 mA, I
R
= 1 A, I
RR
= 250 mA, T
A
= 25°C)
Max
1.2
1.3
10
50
50
250
Units
V
DC
V
DC
μA
μA
pF
nsec
CASE OUTLINE: MINISTUD (C)
CASE OUTLINE: ISOLATED MINISTUD (V)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00017E
DOC
京公网安备 11010802033920号
EEWORLD
