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DPS512E8MGG-12M

Description
SRAM
Categorystorage    storage   
File Size467KB,6 Pages
ManufacturerTwilight Technology Inc.
Download Datasheet Parametric View All

DPS512E8MGG-12M Overview

SRAM

DPS512E8MGG-12M Parametric

Parameter NameAttribute value
MakerTwilight Technology Inc.
package instruction,
Reach Compliance Codeunknown
512Kx8, 55 - 120ns, DLCC
30A142-00
B
4 Megabit CMOS SRAM
DPS512E8MGG
DESCRIPTION:
The DPS512E8MGG is a monolithic 512K x 8 Static
Random Access Memory (SRAM) fabricated using
CMOS technology. It is designed for use in high
density, low power applications. All pins are TTL
compatible and a single +5 Volt power supply is
required.
The DPS512E8MGG has very low standby power
requirements, making is suitable for applications
needing battery backup.
Each device is packaged in a 32-pin, hermetically
sealed LCC, making the device suitable for
commercial, industrial and military applications.
FUNCTIONAL BLOCK DIAGRAM
FEATURES:
Organizations Available: 512K x 8
Access Times: 55, 70, 85, 100, 120ns (max.)
Fully Static Operation - No clock or refresh
required
Single +5V Power Supply, ±10% Tolerance
TTL Compatible
Common Data Inputs and Outputs
Low Data Retention Voltage:
2.0V min.
Package Available: 32- pad Inline LCC
PIN-OUT DIAGRAM
PIN NAMES
A0 - A18
I/O0 - I/O7
CE
WE
OE
V
DD
V
SS
Address Inputs
Data Input/Output
Low Chip Enable
Write Enable
Output Enable
Power (+5V)
Ground
30A142-00
REV. B
This document contains information on a product that is currently released
to production at Dense-Pac Microsystems, Inc. Dense-Pac reserves the
right to change products or specifications herein without prior notice.
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