ICs for Audio Common Use
AN7511
1-W BTL audio power amplifier
I
Overview
The AN7511 is an audio power amplifier IC with 1-ch
output. The BTL (Balanced Transformer-Less) method can
provide fewer external parts and more easy design for ap-
plications.
Unit: mm
M
ain
Di
sc te
on na
tin nc
ue e/
d
1
2
3
4
8
7
6
5
9.2±0.2
I
Features
0.3±0.26
3.35±0.2 3.89±0.2
I
Applications
•
Televisions, radios, and personal computers
I
Block Diagram
V
CC
5
isc
Output
6
Ma
int
en
an
28 dB
Output
8
GND 7
(for output)
28 dB
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0.30
–0
+0.1 5
.0
•
1-W output (8
Ω)
with supply voltage of 5 V
•
On-chip standby function
•
On-chip muting function
6.4±0.2
3° to 15°
7.62±0.3
DIP008-P-0300K
ue
Ripple
rejection
circuit
1 Standby
on
tin
Attenuator
ce
Thermal
shutdown
/D
Attenuator
control
2.54
0.5
1.3
1.5
0.9
1.0
Publication date: November 2001
SDC00031BEB
1
AN7511
I
Pin Descriptions
Pin No.
1
2
3
4
5
6
7
8
Description
Standby (standby state if this pin is open.)
Input
Ground (for input)
Muting (muting on if this pin is open.)
Supply voltage
+
Output
−
Output
I
Absolute Maximum Ratings
Parameter
Supply voltage
*2
Supply current
Symbol
V
CC
I
CC
Power dissipation
*3
Operating ambient temperature
*1
Storage temperature
*1
Note) *1: Except for the operating ambient temperature and storage temperature, all ratings are for T
a
=
25°C.
*2: At no signal
*3: The power dissipation shown is the value for T
a
=
70°C.
I
Recommended Operating Range
Parameter
Supply voltage
Symbol
V
CC
an
Parameter
ce
/D
I
Electrical Characteristics at V
CC
=
5.0 V, R
L
=
8
Ω,
f
=
1 kHz, T
a
=
25°C
±
2°C
Symbol
I
CQ
I
STB
V
NO
G
V
THD
P
O1
RR
V
OFF
MT
Conditions
Min
Ma
int
en
Quiescent circuit current
Standby current
V
IN
=
0 mV
V
IN
=
0 mV
R
g
=
10 kΩ
Output noise voltage
*
Voltage gain
P
O
=
0.25 W
P
O
=
0.25 W
THD
=
10%
Total harmonic distortion
Maximum output power
Ripple rejection ratio
*
Output offset voltage
Muting effect
*
R
g
=
10 kΩ, V
R
=
0.5 V[rms], f
R
=
120 Hz
R
g
=
10 kΩ
P
O
=
0.25 W
Note) *: In measuring, the filter for the range of 15 Hz to 30 kHz (12 dB/OCT) is used.
2
d
pla inc
Pl
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Rating
14
Unit
V
1.0
A
P
D
541
mW
°C
°C
T
opr
T
stg
−25
to
+70
−55
to
+150
Range
Unit
V
3.5 to 13.5
Typ
30
1
Max
60
Unit
mA
µA
dB
%
W
dB
mV
dB
10
0.14
34
0.4
36
300
32
0.05
1.1
50
0
86
0.5
0.8
30
−300
70
SDC00031BEB
M
ain
Di
sc te
on na
tin nc
ue e/
d
Ground (for output ch.1)
isc
on
tin
ue
mV[rms]
1
Pin No.
4
Pin name
Input pin
GND
Standby pin
Muting pin
3
2
Ma
int
en
an
ce
1
V
CC
I
Terminal Equivalent Circuits
/D
isc
V
CC
V
CC
on
200
Ω
4
2
tin
2 kΩ
Pl
ue
di
30 kΩ
200
Ω
200
Ω
3
SDC00031BEB
Equivalent circuit
10 kΩ
400
Ω
To Mute
V
RF
(≈ V
CC
)
1/2 V
CC
Ref.
=
1.25 V
M
ain
Di
sc te
on na
tin nc
ue e/
d
To the constant
current circuit
To the shock
sound prevention
circuit
5V
Voltage
pla nc
e
ne lud
5 kΩ
a
5 kΩ
50 kΩ
se
50
µA
pla m d m es
33 kΩ
ne ain ain foll
htt visit
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12 kΩ
5 kΩ
/w llo dis isc nan nan ing
ww wi co on ce c fo
30
.se ng ntin tin
kΩ
ty e ty ur
P
mi UR ue ued pe pe
30
µA
ro
10 kΩ
co L a d t ty
du
n.p bo yp pe
ct
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life
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cy
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0V
AN7511
3
AN7511
I
Terminal Equivalent Circuits (continued)
Pin No.
5
6
Pin name
V
CC
+
Output pin
Equivalent circuit
V
CC
Voltage
5.0 V
2.15 V
M
ain
Di
sc te
on na
tin nc
ue e/
d
200
Ω
50
Ω
1/2 V
CC
800
Ω
20 kΩ
6
7
GND
8
−
Output pin
isc
1/2 V
CC
I
Usage Notes
•
Please avoid the short circuit to V
CC
, ground, or load short circuit.
•
Please connect the cooling fin with the GND potential.
•
The thermal shutdown circuit operates at about T
j
=
150°C. However, the thermal shutdown circuit is reset automati-
cally if the temperature drops.
•
Please carefully design the heat radiation especially when you take out high power at high V
CC
.
•
Please connect only the ground of signal with the signal GND of the amplifier in the previous stage.
4
Ma
int
en
an
ce
/D
800
Ω
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0V
7
V
CC
2.15 V
ue
200
Ω
on
tin
50
Ω
8
20 kΩ
SDC00031BEB
AN7511
I
Technical Data
1. Package power dissipation
P
D
T
a
1 000
900
800
Independent IC without a heat sink
R
th(j-a)
=
148°C/W
P
D
=
845 mW (25°C)
Power dissipation P
D
(mW)
300
200
100
0
0
2. Main characteristics
8
7
6
5
4
3
2
1
0
0
P
O
V
CC
P
O
(8
Ω)
Ma
int
en
f
=
1 kHz
THD
=
10%
R
L
=
8
Ω
400 Hz HPF
30 kHz LPF
Both ch. inputs
R
g
=
10 kΩ
V
STB
=
5 V
V
MUTE
=
0 V
12
2
4
6
8
10
Supply voltage V
CC
(V)
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
25
50
70 75
100
125
150
M
ain
Di
sc te
on na
tin nc
ue e/
d
600
500
400
700
Ambient temperature T
a
(°C)
I
CQ
, I
STB
V
CC
100
90
80
70
60
50
40
30
20
10
10
9
8
7
6
5
Quiescent circuit current I
CQ
(A)
on
I
CQ
an
I
STB
4
R
L
=
8
Ω
Both ch. inputs 3
R
g
=
10 kΩ
V
STB
=
0 V/5 V
2
V
MUTE
=
0 V
1
12
14
0
ce
/D
14
0
0
2
4
6
8
10
Supply voltage V
CC
(V)
SDC00031BEB
Standby current I
STB
(µA)
Output power P
O
(W)
isc
tin
ue
5
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