Data Sheet, V2.1, Oct. 2006
BGF100
Microphone Filter and ESD Protection
Small Signal Discretes
Edition 2006-10-17
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2006.
All Rights Reserved.
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characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
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BGF100
BGF100
Revision History: 2006-10-17, V2.1
Previous Version: 2006-01-30
Page
All
Subjects (major changes since last revision)
Layout conformation
Data Sheet
3
V2.1, 2006-10-17
BGF100
Microphone Filter and ESD Protection
Microphone Filter and ESD Protection
Features
• Differential Microphone filter
• Integrated ESD protection up to 15 kV
• Low input impedance
• More than 30 dB stopband attenuation
• Ideal for GSM/UMTS
• Wafer Level Package with SnAgCu solder balls
WLP-11-1, -2, -3
Description
The BGF100 is a microphone filter with low pass characteristic offering a very high stop band attenuation up to
6 GHz. It also provides an ESD protection at the input pins up to 15 kV contact discharge. The wafer level package
is a green leadfree package with a size of only 1.6 mm
×
2.1 mm and a total height of 0.65 mm.
A4
A2
B4
B1
B3
C4
A3
B2
C1
C3 A3 B2
C3
A3
B2
C2
Figure 1
Type
BGF100
Table 1
Parameter
Voltage at pin A2 to GND
Voltage at all other pins to GND
Operating temperature range
Data Sheet
Blockdiagram
Package
WLP-11-2
Maximum Ratings
Symbol
Min.
Values
Typ.
Max.
4
14
+85
V
V
°C
V2.1, 2006-10-17
0
-14
-40
4
Unit
Note /
Test Condition
Marking
BGF100
Chip
N0700
V
A2
V
P
T
OP
BGF100
Microphone Filter and ESD Protection
Table 1
Parameter
Maximum Ratings
(cont’d)
Symbol
Min.
Values
Typ.
Max.
Unit
Note /
Test Condition
Storage temperature range
Input power at all pins
Contact discharge at pins B4 to B3, C4 to C3
Contact discharge between all other pins
Table 2
Parameter
Electrical Characteristics
1)
T
STG
P
IN
V
E
V
I
-65
+150
1
°
C
mW
kV
kV
Electrostatic Discharge According to IEC61000-4-2
-15
-2
15
2
Symbol
Min.
Values
Typ.
Max.
Unit
Note /
Test Condition
Resistors
R
1
,
R
2
Resistors
R
3
,
R
4
Resistors
R
5
,
R
6
Resistor Matching
R
3
,
R
4
Capacitances
C
1
to
C
6
Substrate leakage currents,
Pin B4 to A3 or C4 to A3
Insertion loss
2)
Pins B4 to B1 or C4 to C1
1) at
T
A
= 25
°C
R
1,2
R
3,4
R
5,6
R
M
C
I
IL
45
950
1980
-1
800
50
1000
2200
1000
55
1050
2420
+1
1350
100
Ω
Ω
Ω
%
pF
nA
dB
V
=3V
f
= 0.1 … 6 GHz,
Z
S
=
Z
L
= 50
Ω
30
2) Insertion loss (see also
Figure 3)
strongly depends upon source and load impedance. For RF test purposes a 50
Ω
environment is used.
Data Sheet
5
V2.1, 2006-10-17
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