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MT3S22P

Description
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size185KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

MT3S22P Overview

VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

MT3S22P Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionCOLLECTOR
Maximum collector current (IC)0.08 A
Collector-based maximum capacity1.25 pF
Collector-emitter maximum voltage6 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)8500 MHz
MT3S22P
TOSHIBA Transistor
Silicon NPN Epitaxial Planar Type
MT3S22P
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
Unit: mm
FEATURES
Low Noise Figure: NF=1.5dB(Typ.) (@f=1GHz)
High Gain: |S21e|
2
=10.5dB(Typ.) (@f=1GHz)
Marking
T 5
PW-Mini
JEDEC
-
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (Typ.)
Rating
12
6
2
80
10
400
1.8
150
−55
to 150
Unit
V
V
V
mA
mA
mW
W
°C
°C
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-current
Base-current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
(Note1)
T
j
T
stg
Note.1: The device is mounted on a ceramic board (25mm
×
25mm
×
0.8 mm (t))
Note.2 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-10

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