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SSM5G11TU

Description
DC-DC Converter Applications
CategoryDiscrete semiconductor    The transistor   
File Size194KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

SSM5G11TU Overview

DC-DC Converter Applications

SSM5G11TU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts5
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)1.4 A
Maximum drain-source on-resistance0.226 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
SSM5G11TU
Silicon P Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5G11TU
DC-DC Converter Applications
4-V drive
Combined a P-ch MOSFET and a Schottky barrier diode in one package.
Low R
DS (ON)
and Low V
F
Unit: mm
Absolute Maximum Ratings
MOSFET (Ta
=
25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
Rating
-30
±
20
-1.4
-2.8
500
150
Unit
V
V
A
mW
°C
Schottky Barrier Diode
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
Junction temperature
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
Rating
30
0.7
2 (50Hz)
125
Unit
V
A
A
°C
UFV
JEDEC
JEITA
TOSHIBA
2-2R1A
Weight: 7 mg (typ.)
MOSFET and Diode
(Ta
=
25°C)
Characteristics
Storage temperature range
Symbol
T
stg
Rating
−55
to125
Unit
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu pad: 645 mm )
Marking
5
4
Equivalent Circuit
(top view)
5
4
KEV
1
2
3
1
2
3
Start of commercial production
2008-04
1
2014-03-01

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