WED3EG7232S-JD3
PRELIMINARY
256MB – 32Mx72 DDR SDRAM UNBUFFERED
FEATURES
Double-data-rate architecture
DDR200, DDR266, DDR333 amd DDR400
• JEDEC design specifications
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2, 2.5 (clock)
Programmable Burst Length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input.
Auto and self refresh
Serial presence detect
Power supply:
• V
CC
= V
CCQ
= +2.5V ± 0.2V (100, 133 and
166MHz)
• V
CC
= V
CCQ
= +2.6V ± 0.1V (200MHz)
JEDEC 184 pin DIMM package
• JD3 PCB height: 30.48 (1.20") Max
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
* This product is under development, is not qualified or characterized and is subject to
change without notice.
DESCRIPTION
The WED3EG7232S is a 32Mx72 Double Data Rate
SDRAM memory module based on 256Mb DDR SDRAM
components. The module consists of nine 32Mx8 DDR
SDRAMs in 66 pin TSOP packages mounted on a 184
pin FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
OPERATING FREQUENCIES
DDR400 @CL=3
Clock Speed
CL-t
RCD
-t
RP
200MHz
3-3-3
DDR333 @CL=2.5
166MHz
2.5-3-3
DDR266 @CL=2
133MHz
2-2-2
DDR266 @CL=2.5
133MHz
2.5-3-3
DDR200 @CL=2
100MHz
2-2-2
June 2006
Rev. 6
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED3EG7232S-JD3
PRELIMINARY
PIN CONFIGURATION
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
SYMBOL
V
REF
DQ0
V
SS
DQ1
DQS0
DQ2
V
CC
DQ3
NC
NC
V
SS
DQ8
DQ9
DQS1
V
CCQ
CK1
CK1#
V
SS
DQ10
DQ11
CKE0
V
CCQ
DQ16
DQ17
DQS2
V
SS
A9
DQ18
A7
V
CCQ
DQ19
A5
DQ24
V
SS
DQ25
DQS3
A4
V
CC
DQ26
DQ27
A2
V
SS
A1
CB0
CB1
V
CC
PIN
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
SYMBOL
DQS8
A0
CB2
V
SS
CB3
BA1
DQ32
V
CCQ
DQ33
DQS4
DQ34
V
SS
BA0
DQ35
DQ40
V
CCQ
WE#
DQ41
CAS#
V
SS
DQS5
DQ42
DQ43
V
CC
NC
DQ48
DQ49
V
SS
CK2#
CK2
V
CCQ
DQS6
DQ50
DQ51
V
SS
V
CCID
DQ56
DQ57
V
CC
DQS7
DQ58
DQ59
V
SS
NC
SDA
SCL
PIN
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
SYMBOL
V
SS
DQ4
DQ5
V
CCQ
DQM0
DQ6
DQ7
V
SS
NC
NC
NC
V
CCQ
DQ12
DQ13
DQM1
V
CC
DQ14
DQ15
NC
V
CCQ
NC
DQ20
A12
V
SS
DQ21
A11
DQM2
V
CC
DQ22
A8
DQ23
V
SS
A6
DQ28
DQ29
V
CCQ
DQM3
A3
DQ30
V
SS
DQ31
CB4
CB5
V
CCQ
CK0
CK0#
PIN
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
SYMBOL
V
SS
DQM8
A10
CB6
V
CCQ
CB7
V
SS
DQ36
DQ37
V
CC
DQM4
DQ38
DQ39
V
SS
DQ44
RAS#
DQ45
V
CCQ
CS0#
NC
DQM5
V
SS
DQ46
DQ47
NC
V
CCQ
DQ52
DQ53
NC
V
CC
DQM6
DQ54
DQ55
V
CCQ
NC
DQ60
DQ61
V
SS
DQM7
DQ62
DQ63
V
CCQ
SA0
SA1
SA2
V
CCSPD
A0-A12
BA0-BA1
DQ0-DQ63
CB0-CB7
DQS0-DQS8
CK0, CK1, CK2
CK0#, CK1#, CK2#
CKE0
CS0#
RAS#
CAS#
WE#
DQM0-DQM8
V
CC
V
CCQ
V
SS
V
REF
V
CCSPD
SDA
SCL
SA0-SA2
V
CCID
NC
PIN NAMES
Address input (Multiplexed)
Bank Select Address
Data Input/Output
Check bits
Data Strobe Input/Output
Clock Input
Clock Input
Clock Enable input
Chip Select Input
Row Address Strobe
Column Address Strobe
Write Enable
Data-in-mask
Power Supply
Power Supply for DQS
Ground
Power Supply for Reference
Serial EEPROM Power Supply
Serial data I/O
Serial clock
Address in EEPROM
V
CC
Indentification Flag
No Connect
June 2006
Rev. 6
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED3EG7232S-JD3
PRELIMINARY
FUNCTIONAL BLOCK DIAGRAM
CS0#
DQS0
DQM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS1
DQM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2
DQM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DQM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQS8
DQM8
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DQS4
DQM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS5
DQM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQS6
DQM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS7
DQM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
DM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS#
DQS
SERIAL PD
SCL
WP
A0
A1
A2
SDA
SA0 SA1 SA2
RAS#
CAS#
BA0-BA1
WE#
A0-A12
CKE0
RAS#: SDRAMs
CAS#: SDRAMs
BA0-BA1: SDRAMs
WE#: SDRAMs
A0-A12: SDRAMs
CKE0: SDRAMs
V
CCSPD
V
CCQ
V
CC
V
REF
V
SS
SPD
DDR SDRAMs
DDR SDRAMs
DDR SDRAMs
DDR SDRAMs
CLOCK INPUT
CK0, CK0#
CK1, CK1#
CK2, CK2#
3 SDRAMS
3 SDRAMS
3 SDRAMS
NOTES: All resistor values are 22 ohms unless otherwise specified.
June 2006
Rev. 6
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED3EG7232S-JD3
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Current
Note:
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
T
STG
P
D
I
OS
Value
-0.5 to 3.6
-1.0 to 3.6
-55 to +150
9
50
Units
V
V
°C
W
mA
Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
DC CHARACTERISTICS
0°C
≤
T
A
≤
70°C, DDR400: V
CC
= V
CCQ
= +2.6V ± 0.1V; DDR333, 266, 200: V
CC
= V
CCQ
= 2.5V ± 0.2V
Parameter
Supply Voltage
Supply Voltage
Reference Voltage
Termination Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Symbol
V
CC
V
CCQ
V
REF
V
TT
V
IH
V
IL
V
OH
V
OL
Min
2.3
2.3
1.15
1.15
V
REF
+ 0.15
-0.3
V
TT
+ 0.76
—
Max
2.7
2.7
1.35
1.35
V
CCQ
+ 0.3
V
REF
-0.15
—
V
TT
-0.76
Unit
V
V
V
V
V
V
V
V
CAPACITANCE
T
A
= 25°C. f = 1MHz, DDR400: V
CC
= V
CCQ
= +2.6V ± 0.1V; DDR333, 266, 200: V
CC
= V
CCQ
= 2.5V ± 0.2V
Parameter
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0, CKE1)
Input Capacitance (CK0#,CK0)
Input Capacitance (CS0#, CS1#)
Input Capacitance (DQM0-DQM8)
Input Capacitance (BA0-BA1)
Data input/output capacitance (DQ0-DQ63)(DQS)
Data input/output capacitance (CB0-CB7)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT
C
OUT
Max
32
32
32
32
32
8
32
8
8
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
June 2006
Rev. 6
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WED3EG7232S-JD3
PRELIMINARY
I
DD
SPECIFICATIONS AND TEST CONDITIONS
DDR400: V
CC
= V
CCQ
= +2.6V ± 0.1V; DDR333, 266, 200: V
CC
= V
CCQ
= 2.5V ± 0.2V
Includes DDR SDRAM component only
DDR400@
CL=3
Max
DDR333@
CL=2.5
Max
DDR266@
CL=2
Max
DDR266@
CL=2.5
Max
DDR200@
CL=2
Max
Parameter
Operating Current
Symbol Conditions
I
DD0
One device bank; Active - Precharge;
t
RC
=t
RC
(MIN); t
CK
=t
CK
(MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control
inputs changing once every two
cycles.
One device bank; Active-Read-
Precharge Burst = 2; t
RC
=t
RC
(MIN);
t
CK
=t
CK
(MIN); l
OUT
= 0mA; Address
and control inputs changing once per
clock cycle.
All device banks idle; Power-down
mode; t
CK
=t
CK
(MIN); CKE=(low)
CS# = High; All device banks idle;
t
CK
=t
CK
(MIN); CKE = high; Address
and other control inputs changing
once per clock cycle. V
IN
= V
REF
for
DQ, DQS and DM.
One device bank active; Power-
Down mode; t
CK
(MIN); CKE=(low)
CS# = High; CKE = High; One device
bank; Active-Precharge; t
RC
=t
RAS
(MAX); t
CK
=t
CK
(MIN); DQ, DM and
DQS inputs changing twice per clock
cycle; Address and other control
inputs changing once per clock cycle.
Burst = 2; Reads; Continuous burst;
One device bank active; Address
and control inputs changing once
per clock cycle; T
CK
= T
CK
(MIN); l
OUT
= 0mA.
Burst = 2; Writes; Continuous burst;
One device bank active; Address
and control inputs changing once per
clock cycle; t
CK
=t
CK
(MIN); DQ,DM
and DQS inputs changing once per
clock cycle.
t
RC
= t
RC
(MIN)
CKE
≤
0.2V
Four bank interleaving Reads (BL=4)
with auto precharge with t
RC
=t
RC
(MIN); t
CK
=t
CK
(MIN); Address and
control inputs change only during
Active Read or Write commands.
Units
1215
1125
1125
1125
1125
mA
Operating Current
I
DD1
1530
1530
1530
1530
1530
mA
Precharge Power-
Down Standby Current
Idle Standby Current
I
DD2P
I
DD2F
36
36
36
36
36
rnA
540
450
450
450
450
mA
Active Power-Down
Standby Current
Active Standby Current
I
DD3P
I
DD3N
360
270
270
270
270
mA
630
540
540
540
540
mA
Operating Current
I
DD4R
1800
1575
1575
1575
1575
mA
Operating Current
I
DD4W
1755
1575
1575
1575
1575
rnA
Auto Refresh Current
Self Refresh Current
Operating Current
I
DD5
I
DD6
I
DD7A
2340
36
4230
2295
36
3690
2295
36
3690
2295
36
3690
2295
36
3690
mA
mA
mA
June 2006
Rev. 6
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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