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DF2S24UCT

Description
UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size136KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

DF2S24UCT Overview

UNIDIRECTIONAL, SILICON, TVS DIODE

DF2S24UCT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionR-XBCC-N2
Contacts2
Manufacturer packaging codeCST2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage22 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-XBCC-N2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.15 W
Maximum repetitive peak reverse voltage19 V
surface mountYES
technologyAVALANCHE
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
DF2S24UCT
TOSHIBA Diodes for Protecting against ESD
DF2S24UCT
Product for Use Only as Protection against Electrostatic Discharge (ESD)
*This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
Unit: mm
+0.02
0.38 -0.03
Power dissipation
Junction temperature
Storage temperature range
P
T
j
T
stg
150*
150
−55
to 150
mW
°C
°C
0.6±0.05
0.25±0.03 0.25±0.03
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
0.5±0.03
0.05±0.03
CST2
JEDEC
JEITA
TOSHIBA
Weight: 0.7 mg (typ.)
1-1P1A
Electrical Characteristics
(Ta = 25°C)
Characteristic
Reverse stand-off voltage
(between Cathode and Anode)
Reverse breakdown voltage
(between Cathode and Anode)
Reverse current
(between Cathode and Anode)
Total capacitance
(between Cathode and Anode)
Reverse stand-off voltage
(between Anode and Cathode)
Reverse breakdown voltage
(between Anode and Cathode)
Reverse current
(between Anode and Cathode)
Symbol
V
RWM(1)
V
BR(1)
I
R(1)
C
T
V
RWM(2)
V
BR(2)
I
R(2)
I
R
= 1 mA
V
RWM
= 19 V
V
R
=
0 V, f
=
1 MHz
I
R
= 1 mA
V
RWM
= 5 V
Test Condition
Min
22.0
5.3
Typ.
1.6
Max
19
0.5
5
0.1
Unit
V
V
μA
pF
V
V
μA
Marking
RU
Equivalent Circuit (Top View)
1
2011-11-10
0.65
0.05±0.03
Characteristic
Symbol
Rating
Unit
CATHODE MARK
1.0±0.05
Abusolute Maximum Ratings
(Ta = 25°C)
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