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DSF01S30SC

Description
0.1 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size168KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

DSF01S30SC Overview

0.1 A, 30 V, SILICON, SIGNAL DIODE

DSF01S30SC Parametric

Parameter NameAttribute value
package instructionR-XBCC-N2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XBCC-N2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Base Number Matches1
DSF01S30SC
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
DSF01S30SC
High-Speed Switching Application
0.1 9±0.02
Unit: mm
Abusolute Maximum Ratings
(Ta = 25°C)
Characteristic
Reverse voltage
Average forward current
Surge current (10ms)
Junction temperature
Storage temperature range
Symbol
V
R
I
O
I
FSM
T
j
T
stg
Rating
30
100*
2
125
−55
to 125
Unit
V
mA
A
°C
°C
0.62 ±0.03
0.025±0.015
0.27±0.02
0.025±0.015
1: CATHODE
2: ANODE
0.32±0.03
0.19±0.02
0.3±0.03
*:
Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad
dimensions of 4 × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
SC2
JEDEC
JEITA
TOSHIBA
1-1R1A
Weight: 0.17 mg (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
Forward voltage
Reverse current
Reverse current
Total capacitance
Symbol
V
F(1)
V
F(2)
I
R(1)
I
R(2)
C
T
Test
Circuit
Test Condition
I
F
= 10 mA
I
F
= 100 mA
V
R
= 10 V
V
R
= 30 V
V
R
= 0, f = 1 MHz
Min
Typ.
0.27
0.41
9.3
Max
0.3
0.5
7
50
Unit
V
V
μA
μA
pF
Marking
Equivalent Circuit
(Top View)
0.3 8
1
2009-12-03

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