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DSF521CT

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size164KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

DSF521CT Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

DSF521CT Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionCST2, 1-1P1A, 2 PIN
Contacts2
Manufacturer packaging codeCST2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XBCC-N2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
DSF521CT
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
DSF521CT
High Speed Switching Application
CATHODE MARK
Unit: mm
0.05±0.03
0.5±0.03
0.05±0.03
0.6±0.05
0.25±0.03 0.25±0.03
Low forward voltage : V
F (3)
= 0.5V (max)
1.0±0.05
Abusolute Maximum Ratings
(Ta = 25°C)
Characteristic
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Symbol
V
R
I
FM
I
O
I
FSM
P*
T
j
T
stg
T
opr
Rating
30
300
200
1
150
125
−55
to 125
−40
to 100
Unit
V
mA
mA
A
mW
°C
°C
°C
+0.02
0.38 -0.03
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
CST2
JEDEC
JEITA
TOSHIBA
1-1P1A
Weight: 0.7 mg (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R (1)
I
R (2)
C
T
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 5mA
I
F
= 200mA
V
R
= 10V
V
R
= 30V
V
R
= 0, f = 1 MHz
Min
Typ.
0.2
0.24
0.45
34
Max
0.5
20
30
μA
pF
V
Unit
Equivalent Circuit
(top view)
Marking
86
87
1
2009-06-26
0.65
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