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DSR520CT

Description
0.2 A, 32 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size160KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

DSR520CT Overview

0.2 A, 32 V, SILICON, SIGNAL DIODE

DSR520CT Parametric

Parameter NameAttribute value
package instructionCST2, 1-1P1A, 2 PIN
Contacts2
Manufacturer packaging codeCST2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XBCC-N2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage32 V
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Base Number Matches1
DSR520CT
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
DSR520CT
High-Speed Switching Applications
0.6±0.05
CATHODE MARK
Unit: mm
0.25±0.03 0.25±0.03
0.05±0.03
0.5±0.03
0.05±0.03
1.0±0.05
Low reverse current: I
R
= 5
μA
(max)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
T
opr
Rating
32
30
300
200
1
150*
125
−55
to 125
−40
to 100
Unit
V
V
mA
mA
A
mW
°C
°C
°C
+0.02
0.38 -0.03
CST2
* Mounted on a glass-epoxy circuit board of 20 mm × 20 mm,
pad dimensions of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
1-1P1A
Weight: 0.7 mg (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R
C
T
Test
Circuit
Test Condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 200 mA
V
R
= 30 V
V
R
= 0, f = 1 MH
z
Min
Typ.
0.21
0.28
0.52
18
Max
0.39
0.6
5
μA
pF
V
Unit
Equivalent Circuit
(top view)
Marking
86
1
2009-10-01
0.65

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