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TTA1586FU

Description
Audio Frequency General Purpose Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size199KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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TTA1586FU Overview

Audio Frequency General Purpose Amplifier Applications

TTA1586FU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
TTA1586FU
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
TTA1586FU
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: V
CEO
=
−50
V, I
C
=
−150
mA (max)
Excellent hFE linearity:
hFE (IC =
−0.1
mA)/ hFE (IC =
−2
mA)
= 0.95 (typ.)
Unit: mm
High hFE: hFE = 120 to 400
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC4116
Small package
Absolute Maximum Ratings (Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−50
−50
−5
−150
−30
100
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
SC-70
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2E1A
temperature/current/voltage and the significant change in
Weight: 6 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
NF
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
V
CE
= −6
V, I
C
= −0.1
mA, f
=
1 kHz,
Rg
=
10 kΩ
Min
120
80
Typ.
−0.1
4
1.0
Max
−0.1
−0.1
400
−0.3
7
10
V
MHz
pF
dB
Unit
μA
μA
Marking
Type Name
BP2
1
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