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HN4A56JU

Description
Audio Frequency General Purpose Amplifier Applications
File Size184KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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HN4A56JU Overview

Audio Frequency General Purpose Amplifier Applications

HN4A56JU
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN4A56JU
Audio Frequency General Purpose Amplifier Applications
Small Package (Dual Type)
High Voltage and High Current
: V
CEO
=
−50V,
I
C
=
−150mA(MAX.)
High h
FE
Excellent h
FE
Linearity
: h
FE
(I
C
=
−0.1mA)
/ h
FE
(I
C
=
−2mA)
= 0.95 (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
−50
−50
−5
−150
−30
200
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
1.EMITTER1
2.BASE
3.EMITTER2
4.COLLECTOR2
5.COLLECTOR1
(E1)
(B)
(E2)
(C2)
(C1)
JEDEC
JEITA
TOSHIBA
2-2L1C
Weight: 0.0062g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating: Power dissipation per element should not exceed 130mW.
Electrical Characteristics
(Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
V
CE
f
T
C
ob
Test
Circuit
Test Condition
V
CB
=
−50V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−6V,
I
C
=
−2mA
I
C
=
−100mA,
I
B
=
−10mA
V
CE
=
−10V,
I
C
=
−1mA
V
CB
=
−10V,
I
E
= 0, f = 1MHz
Min
120
60
Typ.
−0.1
4
Max
−0.1
−0.1
400
−0.3
V
MHz
pF
Unit
μA
μA
Marking
Equivalent Circuit
(Top View)
5
4
37
Q1
Q2
1
2
3
1
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