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HN4C51J

Description
Audio Frequency General Purpose Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size289KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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HN4C51J Overview

Audio Frequency General Purpose Amplifier Applications

HN4C51J Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G5
Contacts5
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage120 V
ConfigurationCOMMON BASE, 2 ELEMENTS
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G5
Number of components2
Number of terminals5
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment0.3 W
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.3 V
HN4C51J
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN4C51J
Audio Frequency General Purpose Amplifier Applications
High voltage : V
CEO
= 120V
High h
FE
: h
FE
= 200~700
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Low noise : NF = 1dB(typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
Rating
120
120
5
100
20
300
150
Unit
V
V
V
mA
mA
mW
°C
1.EMITTER1
2.BASE
3.EMITTER2
4.COLLECTOR2
5.COLLECTOR1
(E1)
(B)
(E2)
(C2)
(C1)
JEDEC
Storage temperature range
T
stg
−55~150
°C
JEITA
TOSHIBA
2-3L1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.014g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*
Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics
(Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
V
CE
f
T
C
ob
NF
Test
Circuit
Test Condition
V
CB
= 120V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 6V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
=
6 V, I
C
=
0.1 mA
f
=
1 kHz, R
G
=
10 kΩ
Min
200
Typ.
100
3.0
1.0
Max
0.1
0.1
700
0.3
V
MHz
pF
dB
Unit
μA
μA
Marking
Equivalent Circuit
(Top View)
5
4
33
Q1
Q2
1
2
3
1
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