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NVGS3136PT1G

Description
Single P-Channel Power MOSFET -20V, -5.8A, 33mΩ Power MOSFET -20V -5.8A 33 mOhm Single P-Channel TSOP-6, 3000-REEL
CategoryDiscrete semiconductor    The transistor   
File Size128KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance  
Download Datasheet Parametric View All

NVGS3136PT1G Overview

Single P-Channel Power MOSFET -20V, -5.8A, 33mΩ Power MOSFET -20V -5.8A 33 mOhm Single P-Channel TSOP-6, 3000-REEL

NVGS3136PT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionTSOP-6
Manufacturer packaging code318G-02
Reach Compliance Codecompliant
Factory Lead Time1 week
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)3.7 A
Maximum drain-source on-resistance0.033 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.6 W
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
NTGS3136P, NVGS3136P
MOSFET
– Power, Single,
P-Channel, TSOP-6
-20 V, -5.8 A
Features
www.onsemi.com
V
(BR)DSS
R
DS(ON)
TYP
25 mW @
−4.5
V
−20
V
32 mW @
−2.5
V
41 mW @
−1.8
V
P−Channel
1 2 5 6
I
D
MAX
−5.1
A
−4.5
A
−2.5
A
Low R
DS(on)
in TSOP−6 Package
1.8 V Gate Rating
Fast Switching
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Optimized for Battery and Load Management Applications in
Portable Equipment
High Side Load Switch
Switching Circuits for Game Consoles, Camera Phone, etc.
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
v
5s
Power Dissipation
(Note 1)
Steady
State
t
v
5s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
t
p
= 10
ms
P
D
I
DM
T
J
,
T
STG
T
L
I
D
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
P
D
T
A
= 25°C
1.6
−3.7
−2.7
0.7
−20
−55
to
150
260
A
W
A
°C
°C
1
2
3
3
4
Value
−20
$8.0
−5.1
−3.6
−5.8
1.25
W
A
1
XXX
M
G
Unit
V
V
TSOP−6
CASE 318G
STYLE 1
1
= Device Code
= Date Code
= Pb−Free Package
Symbol
V
DSS
V
GS
I
D
MARKING
DIAGRAM
XXX MG
G
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 5 4
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Drain Drain Gate
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0775 in sq).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
May, 2019
Rev. 2
1
Publication Order Number:
NTGS3136P/D
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