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MT29F4G16FBCWPETMS:C

Description
Flash, 256MX16, PDSO48, LEAD FREE, TSOP1-48
Categorystorage    storage   
File Size1MB,58 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
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MT29F4G16FBCWPETMS:C Overview

Flash, 256MX16, PDSO48, LEAD FREE, TSOP1-48

MT29F4G16FBCWPETMS:C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeTSOP1
package instructionLEAD FREE, TSOP1-48
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density4294967296 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count268435456 words
character code256000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
typeSLC NAND TYPE
width12 mm
2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory
Features
NAND Flash Memory
MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP
For the latest data sheet, refer to the Micron Web site:
www.micron.com/products/nand/
Features
• Organization
Page size x8: 2,112 bytes (2,048 + 64 bytes)
Page size x16: 1,056 words (1,024 + 32 words)
Block size: 64 pages (128K + 4K bytes)
Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;
8Gb: 8,192 blocks
• READ performance
Random READ: 25µs
Sequential READ: 30ns (3V x8 only)
• WRITE performance
PROGRAM PAGE: 300µs (TYP)
BLOCK ERASE: 2ms (TYP)
• Endurance: 100,000 PROGRAM/ERASE cycles
• First block (block address 00h) guaranteed to be
valid without ECC (up to 1,000 PROGRAM/ERASE
cycles)
• V
CC
: 1.70V–1.95V
1
or 2.7V–3.6V
• Automated PROGRAM and ERASE
• Basic NAND Flash command set:
PAGE READ, READ for INTERNAL DATA MOVE,
RANDOM DATA READ, READ ID, READ STATUS,
PROGRAM PAGE, RANDOM DATA INPUT, PRO-
GRAM PAGE CACHE MODE, PROGRAM for
INTERNAL DATA MOVE, BLOCK ERASE, RESET
• New commands:
PAGE READ CACHE MODE
One-time programmable (OTP), including:
OTP DATA PROGRAM, OTP DATA PROTECT,
OTP DATA READ
READ UNIQUE ID (contact factory)
READ ID2 (contact factory)
• Operation status byte provides a software method of
detecting:
PROGRAM/ERASE operation completion
PROGRAM/ERASE pass/fail condition
Write-protect status
• READY/BUSY (R/B#) pin provides a hardware
method of detecting PROGRAM or ERASE cycle
completion
• WP# pin: hardware write protect
Figure 1:
48-Pin TSOP Type 1
Options
Marking
• Density:
2Gb (single die)
MT29F2G
4Gb (dual-die stack)
MT29F4G
8Gb (quad-die stack)
MT29F8G
• Device width:
x8
MT29Fxx08x
1
x16
MT29Fxx16x
• Configuration:
# of die # of CE# # of R/B#
1
1
1
A
2
1
1
B
4
2
2
F
• V
CC
:
2.7V–3.6V
A
1
1.70V–1.95V
B
• Third-generation die
C
• Package:
48-Pin TSOP type I (lead-free)
WP
• Operating temperature:
Commercial (0°C to 70°C)
None
2
Extended (–40°C to +85°C)
ET
Notes: 1. Packaged parts are only available for 3V x8
devices. For 1.8V or x16 devices, contact
factory.
2. For ET devices, contact factory.
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__1.fm - Rev. C 10/06 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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