EEWORLDEEWORLDEEWORLD

Part Number

Search

MB322CT08TASG70

Description
EDO DRAM Module, 2MX32, 70ns, MOS, SIMM-72
Categorystorage    storage   
File Size353KB,24 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MB322CT08TASG70 Overview

EDO DRAM Module, 2MX32, 70ns, MOS, SIMM-72

MB322CT08TASG70 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSIMM-72
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time70 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Spare memory width16
JESD-30 codeR-XSMA-N72
memory density67108864 bit
Memory IC TypeEDO DRAM MODULE
Number of functions1
Number of ports1
Number of terminals72
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX32
Output characteristics3-STATE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
refresh cycle1024
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationSINGLE
MOTOROLA
Order this document
by 5VEDOU32S/D
SEMICONDUCTOR
TECHNICAL DATA
1, 2, 4, 8M x 32
DRAM Single-In-Line
Memory Module (SIMM)
4, 8, 16, and 32 Megabyte
JEDEC–Standard 72–Lead Single–In–Line Memory Module (SIMM)
Single 5 V Power Supply, TTL–Compatible Inputs and Outputs
Extended Data Out (EDO)
RAS–Only Refresh, CAS before RAS Refresh, Hidden Refresh
4MB/8MB: 1024 Cycle Refresh: 16 ms
16MB/32MB: 2048 Cycle Refresh: 32 ms
PART NUMBERS
(See Page 23 for Definitions)
Organization
1M x 32
60
MB321BJ08TASN60
MB321BJ08TASG60
MB321BT08TASN60
MB321BT08TASG60
MB322BJ08TASN60
MB322BJ08TASG60
MB322BT08TASN60
MB322BT08TASG60
MB324CJ00TBSN60
MB324CJ00TBSG60
MB324CT00TBSN60
MB324CT00TBSG60
MB328CJ00TBSN60
MB328CJ00TBSG60
MB328CT00TBSN60
MB328CT00TBSG60
70
MB321BJ08TASN70
MB321BJ08TASG70
MB321BT08TASN70
MB321BT08TASG70
MB322BJ08TASN70
MB322BJ08TASG70
MB322BT08TASN70
MB322BT08TASG70
MB324CJ00TBSN70
MB324CJ00TBSG70
MB324CT00TBSN70
MB324CT00TBSG70
MB328CJ00TBSN70
MB328CJ00TBSG70
MB328CT00TBSN70
MB328CT00TBSG70
Organization
1M x 32 (4MB)
2M x 32 (8MB)
8M x 32
36
37
36
37
5 V, EDO, Unbuffered
1M x 32 (4MB), 2M x 32 (8MB)
72–LEAD LOW HEIGHT SIMM
BACK
1
1
FRONT
2M x 32
72
Comp.
Pkg.
TSOP
SOJ
TSOP
SOJ
72
Components
Case
866H–01
866A–02
866H–01
866A–02
Front
Back
4M x 32
2
2
4
2
0
0
0
2
KEY TIMING PARAMETERS
Speed
60
70
tRC (ns)
104
124
tRAC (ns)
60
70
tCAC (ns)
17
20
tAA (ns)
30
35
tEPC (ns)
25
30
4M x 32 (16MB), 8M x 32 (32MB)
72–LEAD LOW HEIGHT SIMM
CASE 866–02 (SOJ),
CASE 866H–01 (TSOP)
BACK
1
1
FRONT
ADDITIONAL PARAMETERS
Active Power
Dissipation
(mW) (Max)
2,035
1,705
2,057
1,727
4,840
4,180
4,928
4,268
176
88
72
72
BACK NOT POPULATED ON 4M x 32 (16MB)
12/5/96
Standby Power
Dissipation
TTL
22
CMOS
11
36
37
44
22
36
37
Configuration
C fi
i
4MB
Speed
S
d
60
70
8MB
60
70
16MB
60
70
88
44
32MB
60
70
©
Motorola, Inc. 1996
MOTOROLA DRAM
5VEDOU32S
1

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2672  1384  923  2434  578  54  28  19  49  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号