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Datasheet> All Categories > Discrete semiconductor> The transistor> DSC8004S0A
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DSC8004S0A

Description
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MT-2-A2-B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size489KB，3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DSC8004S0A Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MT-2-A2-B, 3 PIN

DSC8004S0A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)170
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz

DSC8004S0A Preview

This product complies with the RoHS Directive (EU 2002/95/EC).
DSC8004
Silicon NPN epitaxial planar type
For low frequency output amplification
Complementary to DSA8004
DSC7004 in MT-2 through hole type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, mount area reduction
Eco-friendly Halogen-free package
Package
Code
MT-2-A2-B
Package dimension clicks here.→
Click!
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector power dissipation
*
T
stg
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the board thickness
of 1.7 mm for the collector portion
ce
/D
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
isc
Collector-base voltage (Emitter open)
on
tin
Parameter
Symbol
V
CBO
V
CEO
I
CBO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
EBO
ue
Electrical Characteristics
T
a
= 25°C±3°C
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Rating
60
50
5
2
3
1
Unit
V
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
Packaging
DSC8004×0A Radial type : 2000 pcs / carton
A
A
W
150
°C
°C
–55 to +150
Name
Pin
1. Emitter
2. Collector
3. Base
Marking Symbol: 5B
di
Conditions
Min
60
5
50
Typ
Max
Unit
V
V
V
mA
V
V
MHz
I
C
= 10
mA,
I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
an
Ma
int
en
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
V
CB
= 20 V, I
E
= 0
0.1
V
CE
= 2V, I
C
= 200 mA
V
CE
= 2 V, I
C
= 1 A
I
C
= 1 A, I
B
= 50 mA
I
C
= 1 A, I
B
= 50 mA
120
80
340
0.3
1.2
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Pl
Collector-emitter saturation voltage
*1
0.15
0.9
120
22
V
CE
= 10 V, I
C
= 50 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
35
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
Rank
h
FE1
Marking Symbol
R
R
120 to 240
5BR
S
S
170 to 340
5BS
0
No-rank
120 to 340
5B
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: February 2012
Ver. AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC8004
DSC8004_PC-Ta
1 250
DSC8004_IC-VCE
DSC8004_hFE-IC
400
P
C
T
a
Copper plate at the collector is
more than 1.0 cm
2
in area, 1.7 mm
in thickness.
I
C
V
CE
2 000
T
a
=
25°C
I
B
=
10 mA
8 mA
7 mA
6 mA
5 mA
800
4 mA
3 mA
400
2 mA
9 mA
h
FE
I
C
V
CE
=
2 V
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
1 000
1 600
Forward current transfer ratio h
FE
300
T
a
=
85°C
200
25°C
−30°C
100
750
1 200
500
M
ain
Di
sc te
on na
tin nc
ue e/
d
1 mA
0
0
40
80
120
160
200
0
0
4
8
12
0
1
250
10
10
2
10
3
DSC8004_VCEsat-IC
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
I
C
/ I
B
= 20
2 000
Collector current I
C
(mA)
1 600
1
1 200
T
a
=
85°C
800
10
−1
25°C
−30°C
400
10
−2
Transition frequency f
T
(MHz)
120
40
0
10
−1
1
10
10
2
Collector current I
C
(mA)
2
Pl
80
Ma
int
en
160
an
V
CE
= 10 V
T
a
=
25°C
ce
/D
200
isc
f
T
I
C
on
DSC8004_fT-IC
tin
ue
Collector current I
C
(mA)
di
1
10
10
2
10
3
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n.p bo p
(Common
e
base,capacitance circuited)
ct
C (pF)
Collector
p
output
life
d
input open
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as lat
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DSC8004_IC-VBE
DSC8004_Cob-VCB
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
I
C
V
BE
C
ob
V
CB
60
50
40
V
CE
=
2 V
I
E
= 0
f = 1 MHz
T
a
= 25°C
T
a
=
85°C
ob
25°C
30
20
10
−30°C
0
0
0.4
0.8
1.2
0
1
10
10
2
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
Ver. AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
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M
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Di
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isc
on
tin
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di
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

DSC8004S0A Related Products

DSC8004S0A DSC800400A DSC8004R0A
Description Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MT-2-A2-B, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MT-2-A2-B, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MT-2-A2-B, 3 PIN
Is it Rohs certified? conform to conform to conform to
Maker Panasonic Panasonic Panasonic
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 2 A 2 A 2 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 170 120 120
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz

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