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DMC5610E

Description
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, 5 PIN
CategoryDiscrete semiconductor    The transistor   
File Size433KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DMC5610E Overview

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, 5 PIN

DMC5610E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts5
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-F5
Number of components2
Number of terminals5
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON

DMC5610E Preview

This product complies with the RoHS Directive (EU 2002/95/EC).
DMC5610E
Silicon NPN epitaxial planar type
For digital circuits
DMC2610E in SMini5 type package
Features
Package
Code
SMini5-F3-B
Name
Pin
1: Base (Tr1)
2: Emitter (Common)
3: Base (Tr2)
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Basic Part Number
Dual DRC2144W (Common emitter)
4: Collector (Tr2)
5: Collector (Tr1)
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: R1
Internal Connection
Unit
V
V
mA
mW
°C
°C
Resistance value
R
1
R
2
47
22
kW
(C1)
5
Tr1
R
2
R
1
R
2
R
1
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
150
150
–55 to +150
(C2)
4
Tr2
1
(B1)
2
(E)
3
(B2)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE
ratio
*
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE
(Small/Large)
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= 10
mA,
I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 5 mA
V
CE
= 10 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 100 µA
-30%
1.70
47
2.14
4.4
1.2
+30%
2.60
60
0.50
0.99
0.25
Min
50
50
0.1
0.5
0.2
Typ
Max
Unit
V
V
mA
mA
mA
V
V
V
kW
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Publication date: December 2010
Ver. BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMC5610E
DMC5610E_PT-Ta
DMC5610E_IC-VCE
DMC5610E_hFE-IC
P
T
T
a
250
120
T
a
=
25°C
I
C
V
CE
400
I
B
=
350
µA
80
60
40
20
0
300
µA
250
µA
200
µA
150
µA
100
µA
50
µA
h
FE
I
C
V
CE
=
10 V
Total power dissipation P
T
(mW)
Collector current I
C
(mA)
200
Forward current transfer ratio h
FE
100
300
150
25°C
T
a
=
85°C
100
200
−30°C
50
100
0
0
40
80
120
160
200
Ambient temperature T
a
(
°C
)
DMC5610E_VCEsat-IC
0
2
4
6
8
10
12
0
0.1
1
10
100
Collector-emitter voltage V
CE
(V)
DMC5610E_I
O
-V
IN
Collector current I
C
(mA)
DMC5610E_VIN-IO
V
CE(sat)
I
C
I
O
V
IN
10
V
O
=
5 V
100
V
IN
I
O
V
O
=
0.2 V
Collector-emitter saturation voltage V
CE(sat)
(V)
10
I
C
/ I
B
= 20
Output current I
O
(mA)
Input voltage V
IN
(V)
1
1
10
25°C
T
a
= −30°C
85°C
10
−1
T
a
=
85°C
25°C
0.1
T
a
=
85°C
−30°C
25°C
1
10
−2
−30°C
0.01
0.1
1
10
100
10
−3
0
0.5
1.0
1.5
2.0
2.5
0.1
0.1
1
10
100
Collector current I
C
(mA)
Input voltage V
IN
(V)
Output current I
O
(mA)
2
Ver. BED
This product complies with the RoHS Directive (EU 2002/95/EC).
DMC5610E
SMini5-F3-B
Unit: mm
2.0
±0.1
1.3
±0.1
(0.65)
5
(0.65)
4
1.25
±0.10
2.1
±0.1
1
2
3
(0.425)
0.20
±0.05
0.13
−0.02
+0.05
0 to 0.10
0.7
±0.1
(0.15)
Ver. BED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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