EEWORLDEEWORLDEEWORLD

Part Number

Search

D1040UK

Description
RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DR, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size162KB,5 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

D1040UK Online Shopping

Suppliers Part Number Price MOQ In stock  
D1040UK - - View Buy Now

D1040UK Overview

RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DR, 4 PIN

D1040UK Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage70 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

D1040UK Preview

TetraFET
D1040UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
(2 pls)
B
G
(typ)
2
1
H
D
3
P
(2 pls) A
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
400W – 28V – 108MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
E
(4 pls)
F
I
N
M
O
J
K
DR
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
Millimetres
19.05
10.77
45°
9.78
5.71
27.94
1.52R
10.16
22.22
0.13
2.72
1.70
5.08
34.03
1.61R
Tol.
0.50
0.13
0.13
0.13
0.13
0.13
0.13
MAX
0.02
0.13
0.13
0.50
0.13
0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.064R
Tol.
0.020
0.005
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
PIN 2
PIN 4
DRAIN 1
GATE 2
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
VHF FM COMMUNICATIONS
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
438W
70V
±20V
35A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 5460
Issue 3
D1040UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
h
VSWR
C
iss
C
oss
C
rss
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
V
GS
= 0
V
DS
= 28V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 400W
V
DS
= 28V
f = 108MHz
I
DQ
= 2A
I
D
= 100mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 7A
1
5.6
16
65
20:1
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
70
Typ.
Max. Unit
V
7
7
7
mA
mA
V
S
dB
%
380
180
10
pF
pF
pF
TOTAL DEVICE
PER SIDE
V
DS
= 28V
V
DS
= 28V
Reverse Transfer Capacitance V
DS
= 28V
* Pulse Test:
Pulse Duration = 300
ms
, Duty Cycle
£
2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 0.4°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 5460
Issue 3
D1040UK
600
500
23
22
21
Gain dB
Pout (W)
400
300
200
100
0
20
19
18
17
16
15
0
50
Class C 32V
Class A/B 32V
Class C 28V
Class A/B 28V
f = 108MHz
0
2
4
6
8
10
12
14
16
Class C 32V
Class A/B 32V
Class C 28V
Class A/B 28V
f = 108MHz
100 150 200 250 300 350 400 450 500 550
Pin (W)
Pout (W)
Figure 1
Output Power vs. Input Power
Figure 2
Gain vs. Output Power
90
80
Efficiency %
70
60
50
40
30
20
10
0
0
100
200
300
400
500
600
OPTIMUM SOURCE AND LOAD IMPEDANCE
Class C 32V
Class A/B 32V
Class C 28V
Class A/B 28V
f = 108MHz
Frequency
MHz
108
Z
S
W
1.5 + j3.5
Z
L
W
1.5 - j0.4
Pout (W)
Figure 3
Efficiency vs. Output Power
APPLICATION NOTE
In applications where a constant output power is required irrespective of variations in temperature or
supply voltage etc. then a feedback loop must be incorporated whereby the drain voltage is adjusted
to maintain constant output power.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 5460
Issue 3
D1040UK
50
45
40
35
30
I
DS
(A)
25
Vg=13 V
Vg=12 V
Vg=11 V
Vg=10 V
Vg=9V
Vg=8 V
Vg=7 V
Vg=6 V
Vg=5 V
20
15
10
5
0
0.00
5.00
10.00
15.00
V
DS
(V)
20.00
25.00
30.00
35.00
Figure 4 – Typical IV Characteristics.
Figure 5 – Typical CV Characteristics.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 5460
Issue 3
D1040UK
Drain Bias
Gate Bias
100K
1nF
100nF
10
1nF
L1
1nF
43//43//43pF
22pF
5-60pF
5-60pF
15//15//15pF
5-60pF
10
22pF
43//43//43pF
TL1
100uF
100nF
10K
100pF//68pF
D1040UK
L3
RF I/P
TX1
22pF
5-60pF
10
22pF
100pF//68pF
T1
T2
T3
T4
L4
T5
1nF
L2
1nF
T6
T7
5-60pF
120pF
10K
RF O/P
T8
10
100uF 100nF
Drain Bias
D1040UK 108MHz Test Fixture
Substrate 1.6mm PTFE/glass
e
r=2.2
TX1
TL1
L1, L2
L3, L4
4 turns 50W coaxial cable wound around toroid
160mm UT85 semi-rigid coax
1 turn 1.2mm dia wire on Siemens B62152A1X1 2 hole core
4 turns 1.2mm dia wire, 10mm internal dia
T8 4.8mm wide, all other lines 6mm wide
T1
50mm
T2
40mm
T3
10mm
T4
14mm
T5
8mm
T6
40mm
T7
66mm
T8
160mm
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 5460
Issue 3

D1040UK Related Products

D1040UK D1040UKG4
Description RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DR, 4 PIN RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DR, 4 PIN
Is it Rohs certified? conform to conform to
Maker TT Electronics plc TT Electronics plc
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Shell connection SOURCE SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage 70 V 70 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code R-CDFM-F4 R-CDFM-F4
Number of components 2 2
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
About STM32F051 analog driver HL9576
It's like this, I used HL9576 and used the IO port of STM32F051 to simulate IIC to drive this chip. It turned out that either there was no display or the address felt wrong. SCLK used PB10 and SDA use...
dwlovehome stm32/stm8
【Design Tools】Spartan-3E_FPGA_Chinese Datasheet
Spartan-3E FPGA Family: Introduction and Ordering (Datasheet Module 1) .. 5 Introduction ..................................................................................................................
sdjntl FPGA/CPLD
Share some problems encountered when using CCS
1. Use SEED_XDS510PLUS for CCS simulation Question: When using routine simulation, I couldn't find the 510 option because I was using CCS6.2. Solution: I later searched online and found that XDS510 su...
fish001 Microcontroller MCU
What is the fourth parameter of RegisterDevice for?
As the title says, I know that it is 0 when used normally, but I want to understand it more clearly. Can an expert give me an example to distinguish it?...
jiessiesun Embedded System
Help! Is the Bluetooth on the Windows Mobile 6.0 emulator in vs2005 available?
How can I use the Bluetooth on the Windows Mobile 6.0 simulator in vs2005? Mainly to complete the functions of searching for devices and transferring files?...
ldh2008 Embedded System
Video: TI MSP430 Value Line LaunchPad Development Tool
[flash]http://player.youku.com/player.php/sid/XMTg2MzE0Mzky/v.swf[/flash]It is reported that the MCU starts at only 25 cents and can achieve 10 times the performance of an 8-bit MCU and extend the bat...
soso Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 195  1640  634  2844  2409  4  34  13  58  49 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号