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Datasheet> All Categories > Discrete semiconductor> The transistor> DSA7004-R
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DSA7004-R

Description
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F2-B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size490KB，4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DSA7004-R Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F2-B, 3 PIN

DSA7004-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz

DSA7004-R Preview

This product complies with the RoHS Directive (EU 2002/95/EC).
DSA7004
Silicon PNP epitaxial planar type
For low frequency output amplification
Complementary to DSC7004
DSA8004 in MiniP3 type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
MiniP3-F2-B
Name
Pin
1. Base
2. Collector
3. Emitter
Unit
V
V
V
A
A
W
°C
°C
Packaging
Embossed type (Thermo-compression sealing): 1000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
–60
–50
–5
–2
–3
1
150
–55 to +150
Marking Symbol: 4B
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the board thickness
of 1.7 mm for the collector portion
Absolute maximum rating without heat sink for P
C
is 0.5 W
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= –10
mA,
I
E
= 0
I
C
= –1 mA, I
B
= 0
I
E
= –10
mA,
I
C
= 0
V
CB
= –20 V, I
E
= 0
V
CE
= –2 V, I
C
= –200 mA
V
CE
= –2 V, I
C
= –1 A
I
C
= –1 A, I
B
= –50 mA
I
C
= –1 A, I
B
= –50 mA
V
CE
= –10 V, I
C
= –50 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
120
60
– 0.2
– 0.9
120
33
60
– 0.3
–1.2
Min
–60
–50
–5
– 0.1
340
Typ
Max
Unit
V
V
V
mA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
Rank
h
FE1
Marking Symbol
R
R
120 to 240
4BR
S
S
170 to 340
4BS
0
No-rank
120 to 340
4B
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: January 2011
Ver. CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSA7004
DSA7004_PC-Ta
DSA7004_IC-VCE
DSA7004_hFE-IC
P
C
T
a
1 250
−1
600
T
a
=
25°C
I
C
V
CE
300
h
FE
I
C
V
CE
= −2
V
Collector power dissipation P
C
(mW)
Forward current transfer ratio h
FE
Collector current I
C
(mA)
1 000
I
B
= −10
mA
−1
200
−9
mA
−8
mA
−7
mA
−6
mA
−5
mA
−4
mA
−400
−3
mA
−2
mA
−1
mA
250
200
T
a
=
85°C
750
25°C
150
−30°C
100
50
0
−1
−800
500
250
0
0
40
80
120
160
200
0
0
−2
−4
−6
−8
−10
−12
−10
−10
2
−10
3
−10
4
Ambient temperature T
a
(
°C
)
DSA7004_VCEsat-IC
Collector-emitter voltage V
CE
(V)
DSA7004_IC-VBE
Collector current I
C
(mA)
DSA7004_Cob-VCB
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
= 20
−2
000
V
CE
= −2
V
I
C
V
BE
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
120
100
80
60
40
20
0
−1
C
ob
V
CB
I
E
= 0
f = 1 MHz
T
a
= 25°C
−1
Collector current I
C
(mA)
−1
600
T
a
=
85°C
−1
200
25°C
−10
−1
T
a
=
85°C
25°C
−30°C
−800
−30°C
−400
−10
−2
−10
−10
2
−10
3
−10
4
0
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−10
−100
Collector current I
C
(mA)
DSA7004_fT-IC
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
f
T
I
C
250
V
CE
=
−10
V
T
a
=
25°C
Transition frequency f
T
(MHz)
200
150
100
50
0
−
0.1
−1
−10
−100
Collector current I
C
(mA)
2
Ver. CED
This product complies with the RoHS Directive (EU 2002/95/EC).
DSA7004
MiniP3-F2-B
Unit: mm
4.50
±0.10
1.60
±0.20
1.50
±0.10
4.00
±0.20
2.50
±0.10
(5°)
0.41
±0.03
1
0.40
±0.08
1.50
±0.10
2
0.50
±0.08
3
1.00
±0.10
2.60
±0.10
(5°)
0.50 max.
(45°)
3.00
±0.15
Ver. CED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
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DSA7004-R Related Products

DSA7004-R DSA7004-S DSA7004
Description Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F2-B, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F2-B, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINIP3-F2-B, 3 PIN
Is it Rohs certified? conform to conform to conform to
Maker Panasonic Panasonic Panasonic
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3 3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 2 A 2 A 2 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 170 60
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 1 W 1 W 1 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz

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