RN1706JE datasheet, PDF - EEWORLD Datasheet

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RN1706JE: DescriptionSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; CategoryDiscrete semiconductor The transistor; File Size539KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN1706JE Overview

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1706JE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-F5
Contacts	5
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-F5
Number of components	2
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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RN1701JE~RN1706JE

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN1701JE,RN1702JE,RN1703JE

RN1704JE,RN1705JE,RN1706JE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (5 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

•

A wide range of resistor values is available for use in various circuit

designs.

Complementary to RN2701JE~RN2706JE

1.BASE1

(B1)

2.EMITTER

(E)

3.BASE2

(B2)

4.COLLECTOR2 (C2)

5.COLLECTOR1 (C1)

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1701JE

RN1702JE

RN1703JE

RN1704JE

RN1705JE

RN1706JE

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

JEITA

TOSHIBA

―

2-2P1D

Weight: 0.003 g (typ.)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 common)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN1701JE~

1706JE

RN1701JE~

1704JE

RN1705JE,

RN1706JE

Symbol

CBO

CEO

Rating

EBO

(Note 1)

stg

100

150

−55~150

°C

Unit

Equivalent Circuit

(top view)

Emitter-base voltage

Collector current

Collector power dissipation RN1701JE~

1706JE

Junction temperature

Storage temperature range

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

RN1706JE Related Products

	RN1706JE	RN1701JE	RN1702JE	RN1703JE	RN1704JE	RN1705JE
Description	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5	SMALL OUTLINE, R-PDSO-F5
Contacts	5	5	5	5	5	5
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 10	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 21.37
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	30	50	70	80	80
JESD-30 code	R-PDSO-F5	R-PDSO-F5	R-PDSO-F5	R-PDSO-F5	R-PDSO-F5	R-PDSO-F5
Number of components	2	2	2	2	2	2
Number of terminals	5	5	5	5	5	5
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
Base Number Matches	1	-	1	-	1	1

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